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HER308G

Diodes (General Purpose, Power, Switching) HI Eff Rectifier 3A,1000V

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SeekIC No. : 00138064 Detail

HER308G: Diodes (General Purpose, Power, Switching) HI Eff Rectifier 3A,1000V

HER308G Data Sheet

floor Price/Ceiling Price

US $ .15~.16 / Piece | Get Latest Price
Part Number:
HER308G
Mfg:
Rectron
Supply Ability:
5000

Price Break

  • Qty
  • 0~1200
  • 1200~2400
  • Unit Price
  • $.16
  • $.15
  • Processing time
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Product Details

Description

Product :
Peak Reverse Voltage :
Forward Continuous Current :
Max Surge Current :
Configuration :
Recovery Time :
Forward Voltage Drop :
Maximum Reverse Leakage Current :
Maximum Power Dissipation :
Operating Temperature Range :
Package / Case :
Packaging :


Features:

· Glass passivated chip junction.
· High efficiency, Low VF
· High current capability
· High reliability
· High surge current capability
· For use in low voltage, high frequency inventor, free wheeling, and polarity protection application.




Specifications

Symbol Description
HER
301G
HER
302G
THER
303G
HER
304G
HER
305G
HER
306G
HER
307G
HER
308G
Unit
VRRM Maximum Repetitive
Peak Reverse Voltage
50
100
200
300
400
600
800
1000
V
VRMS Maximum RMS Voltage
35
70
140
210
280
420
560
700
V
VDC Maximum DC Blking
Voltage
50
100
200
300
400
600
800
1000
V
I(AV) Maximum Average
Forward Rectified
Current @Tc=50
3.0
A
IFSM Peak Forward Surge
Current
125
A
VF Isolation Voltage from case to
lugs

1.0
1.3
1.7
V
IR Maximum DC Reverse Current
@TA=25 at Rated DC Blking Voltage
@ TA=125

10
200

uA
uA
Trr Maximum Reverse Recovery Time ( Note 3 )
50
75
CJ Typical Capacitance
Junction(per element)(Note 3)

60
35
pF
RJA
RJL		 Typical Thermal Resistance (Note 3)
35
10
/W
TJ/TSTG Storage Temperature
Range
-65 to +150


Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
3. Mount on Cu-Pad Size 16mm x 16mm on P.C.B






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