Purchase HGTG12N60A4D, In-stock HGTG12N60A4D From SeekIC.
D/C:07+
- Table of contents:
HGTG12N60A4D
-
Suppliers
DataSheet
General Description
HGTG12N60A4D Maximum Ratings
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM
Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM
Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
HGTG12N60A4D Features
• >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12A
• 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125oC
• Low Conduction Loss
• Temperature Compensating SABER™ Model
www.intersil.com
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards
• 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125oC
• Low Conduction Loss
• Temperature Compensating SABER™ Model
www.intersil.com
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards
HGTG12N60A4D
PDF/DataSheet Download
- Datasheet: HGTG12N60A4D
- File Size: 404005 KB
- Manufacturer: FAIRCHILD [Fairchild Semiconductor]
- Click here to Download
- ·HGT1N30N60A4D
- FAIRCHILD [Fairchild Semiconductor]
- 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
- 147560 KB
- ·HGT1N40N60A4
- FAIRCHILD [Fairchild Semiconductor]
- 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
- 155981 KB
- ·HGT1N40N60A4D
- FAIRCHILD [Fairchild Semiconductor]
- 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
- 155981 KB
- ·HGT1S10N120BNS
- FAIRCHILD [Fairchild Semiconductor]
- 35A, 1200V, NPT Series N-Channel IGBT
- 83631 KB
- ·HGT1S11N120CNS
- INTERSIL [Intersil Corporation]
- 43A, 1200V, NPT Series N-Channel IGBT
- 141382 KB
- ·HGT1S12N60A4DS
- FAIRCHILD [Fairchild Semiconductor]
- 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
- 404005 KB
- ·HGT1S12N60A4S
- INTERSIL [Intersil Corporation]
- 600V, SMPS Series N-Channel IGBT
- 117801 KB
- ·HGT1S12N60A4S9A
- FAIRCHILD [Fairchild Semiconductor]
- 600V, SMPS Series N-Channel IGBTs
- 235127 KB
HGTG12N60A4D Relative Products
HGTG12N60A4
The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9A are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9Adevices have the high input impedance of a MOSFET ...
-
HGTG11N120CND
The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and...
-
HGTG11N120CN
The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the hig...
-
HGTG10N120BND
The HGTG10N120BND is a Non-Punch Through (NPT) IGBT design.HGTG10N120BND is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MO...
HGTG10N120BN
The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high...
HGTD8P50G1,HGTD8P50G1S
The HGTD8P50G1 and the HGTD8P50G1S are P-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drives. This P- channel IGBT can be paired with N-C...
Hotspot Suppliers Product
G6H-2 DC12
Price: 0.88-0.95 USD
DPDT Relay, Ultra-compact, Ultra-sensitive, 0.50 A, Highly stable magnetic circuit
ADG506AKNZ
Price: 4-5 USD
28DIP, CMOS monolithic analog multiplexer , 16 channels, dual 8 channels, 44 V, 20 pA
LP171WX2-TL
Price: 120-150 USD
LAPTOP LCD SCREEN 17" LP171WX2 (TL)
BC817-25
Price: 0.01-0.02 USD
NPN General Purpose Amplifier, 800MA, 45V, SOT23-3, NXP
SP3238EEY
Price: 1-1.2 USD
an RS-232 transceiver, 5-driver/3-receiver, auto-Online circuitry
LNBH21PDT-R
Price: 1.5-2 USD
set up converter, monolithic voltage regulator, interface IC
EP1C12Q240C6N
Price: 0.001-0.01 USD
Cyclone FPGA Family, QFP, 2,910 to 20,060 LEs, Up to 294,912 RAM bits, -0.5 to 2.4 V supply voltag...
MPX10DP
Price: 10-20 USD
MPX10DP / 10 kPa Uncompensated Silicon Pressure Sensors SENSOR DIFF PRESS 1.45 PSI MAX - MPX10DP
AM29LV400BB-90EI
Price: 0.65-0.8 USD
Flash memory, TSOP, 2.7V to 3.6V
AT89S52-24PU
Price: 0.58-0.65 USD
8K, flash, 24MHz, 40-DIP, low-power, high-performance CMOS 8-bit microcontroller, 4 V to 5.5 V
74HC14D
Price: 0.07-1 USD
Schmitt-trigger, SOP, 15 pF, CMOS
MAX238CWG
Price: 0.8-1 USD
line driver/receiver, SOP24, -0.3V to +6V, 842mW, Low-Power, Up to 1Mbps, ESD-Protected, Low-Cost
