HGTG20N60C3D

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Gate-Emitter Leakage Current : +/- 250 nA
Package / Case : TO-247-3
Collector-Emitter Saturation Voltage : 1.4 V
Continuous Collector Current at 25 C : 45 A
Power Dissipation : 164 W


Features:

• 45A, 600V, T_C = 25
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 108ns at T_J = 150
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode


Pinout




Specifications

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CES 600 V
Collector Current Continuous At T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25 45 A
Collector Current Continuous At T_C = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . I_C110 20 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  I_CM 300 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM ±30 V
Switching Safe Operating Area at T_J = 150 (Figure 2) . . . . . . . . . . . .SSOA 20A at 600V
Power Dissipation Total at T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P_D 164 W
Power Dissipation Derating T_C > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.32 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . . T_J, T_STG -55 to 150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L 260
Short Circuit Withstand Time (Note 3) at V_GE = 15V. . . . . . . . . . . . . . . . . . . . . . . .t_SC 4 µs
Short Circuit Withstand Time (Note 3) at V_GE = 12V. . . . . . . . . . . . . . . . . . . . . . .t_SC 10 µs 


Description

The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This HGTG20N60C3D  has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 and 150. The IGBT used is development type TA49178. The diode used in anti-parallel with the IGBT is the RHRP3060 (TA49063).

The HGTG20N60C3D IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly developmental type TA49179.

Parameters:

Technical/Catalog Information	HGTG20N60C3D
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	45A
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 20A
Power - Max	164W
Mounting Type	Through Hole
Package / Case	TO-247
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HGTG20N60C3D HGTG20N60C3D