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HGTG30N120D2

Features: • 30A, 1200V• Latch Free Operation• Typical Fall Time - 580ns• High Input Impedance• Low Conduction LossPinoutSpecificationsCollector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES 1200 VCollector-Gate Volta...

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SeekIC No. : 004362162 Detail

HGTG30N120D2: Features: • 30A, 1200V• Latch Free Operation• Typical Fall Time - 580ns• High Input Impedance• Low Conduction LossPinoutSpecificationsCollector-Emitter Voltage . . . . ...

HGTG30N120D2 Data Sheet

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Part Number:
HGTG30N120D2
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 30A, 1200V
• Latch Free Operation
• Typical Fall Time - 580ns
• High Input Impedance
• Low Conduction Loss


Pinout

Connection Diagram


Specifications

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES 1200 V
Collector-Gate Voltage, RGE =1MW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCGR 1200 V
Collector Current Continuous at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . .IC25 50 A
Collector Current Continuous at VGE =15V at TC = +90 . . . . . . . . . . . . . . . .  IC90 30 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 200 A
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  VGES ±20 V
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM ±30 V
Switching Safe Operating Area at TJ = +150 . . . . . . . . . . . . . .SSOA 200A at 0.8 BVCES
Power Dissipation Total at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 208 W
Power Dissipation Total Derating TC > +25 . . . . . . . . . . . . . . . . . . . . . . . . . .1.67 W/
Operating and Storage Junction Temperature Range . . . . . . . . . .TJ, TSTG -55 to +150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . tSC 6 mS
Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . tSC 15 mS

 




Description

The HGTG30N120D2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25 and +150.

The HGTG30N120D2 IGBTs are ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.




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