IGBT Transistors 600V IGBT UFS N-Channel
HGTG30N60B3D: IGBT Transistors 600V IGBT UFS N-Channel
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Features: • 35A, 1200V, TC = 25• 1200V Switching SOA Capability• Typical Fall Ti...
| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
| Collector-Emitter Saturation Voltage : | 1.45 V | Maximum Gate Emitter Voltage : | +/- 20 V | ||
| Continuous Collector Current at 25 C : | 60 A | Gate-Emitter Leakage Current : | +/- 250 nA | ||
| Power Dissipation : | 208 W | Maximum Operating Temperature : | + 150 C | ||
| Package / Case : | TO-247-3 | Packaging : | Tube |
| Technical/Catalog Information | HGTG30N60B3D |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 60A |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 30A |
| Power - Max | 208W |
| Mounting Type | Through Hole |
| Package / Case | TO-247 |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | HGTG30N60B3D HGTG30N60B3D |