HGTP10N50F1D

Features:

• 10A, 400V and 500V
• Latch Free Operation
• Typical Fall Time < 1.4ms
• High Input Impedance
• Low Conduction Loss
• Anti-Parallel Diode
• tRR < 60ns


Pinout




Specifications

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CES 400 500 V
Collector-Gate Voltage R_GE = 1MW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CGR 400 500 V
Collector Current Continuous at T_C = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  I_C25 12 12 A
at T_C = +90 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .I_C90 10 10 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_CM 12 12 A
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ._VGES ±20 ±20 V
Diode Forward Current at T_C = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_F25 16 16 A
at T_C = +90 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_F90 10 10 A
Power Dissipation Total at T_C = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P_D 75 75 W
Power Dissipation Derating T_C > +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 0.6 W/
Operating and Storage Junction Temperature Range . . . . . . .. T_J, T_STG -55 to +150 -55 to +150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L 260 260


Description

The HGTP10N50F1D IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The HGTP10N50F1D has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25 and +150. The diode used in parallel with the IGBT is an ultrafast (tRR < 60ns) with soft recovery characteristic.

HGTP10N50F1D IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.