HGTP20N60C3 General Description
This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 and 150.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly developmental type TA49178.
HGTP20N60C3 Maximum Ratings
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . .BVCES 600 V
Collector Current Continuous
At TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . IC25 45 A
At TC = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 20 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 300 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. VGEM ±30 V
Switching Safe Operating Area at TJ = 150 (Figure 2) . . . . . . . . . . ..SSOA 20A at 600V
Power Dissipation Total at TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..PD 164 W
Power Dissipation Derating TC > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.32 W/
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV 100 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . TJ, TSTG -55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL300
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg260
Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . .tSC 4 µs
Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . .tSC 10 µs
HGTP20N60C3 Features
• 45A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 108ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
HGTP20N60C3 Connection Diagram

- ·HGT1N30N60A4D
- FAIRCHILD [Fairchild Semiconductor]
- 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
- 147560 KB

- ·HGT1N40N60A4
- FAIRCHILD [Fairchild Semiconductor]
- 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
- 155981 KB

- ·HGT1N40N60A4D
- FAIRCHILD [Fairchild Semiconductor]
- 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
- 155981 KB

- ·HGT1S10N120BNS
- FAIRCHILD [Fairchild Semiconductor]
- 35A, 1200V, NPT Series N-Channel IGBT
- 83631 KB

- ·HGT1S11N120CNS
- INTERSIL [Intersil Corporation]
- 43A, 1200V, NPT Series N-Channel IGBT
- 141382 KB

- ·HGT1S12N60A4DS
- FAIRCHILD [Fairchild Semiconductor]
- 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
- 404005 KB

- ·HGT1S12N60A4S
- INTERSIL [Intersil Corporation]
- 600V, SMPS Series N-Channel IGBT
- 117801 KB

- ·HGT1S12N60A4S9A
- FAIRCHILD [Fairchild Semiconductor]
- 600V, SMPS Series N-Channel IGBTs
- 235127 KB

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