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HGTP20N60C3R

Features: • 40A, 600V TJ = 25oC• 600V Switching SOA Capability• Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . 330ns• Short Circuit Rating at TJ = 150oC. . . . . . . . . . .. 10s• Low Conduction LossSpecifications ALL TYPES UNITSCollector-Emitter Voltage ....

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HGTP20N60C3R: Features: • 40A, 600V TJ = 25oC• 600V Switching SOA Capability• Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . 330ns• Short Circuit Rating at TJ = 150oC. . . . . ....

HGTP20N60C3R Data Sheet

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Part Number:
HGTP20N60C3R
Supply Ability:
5000

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  • 1~5000
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Product Details

Description



Features:

• 40A, 600V TJ = 25oC
• 600V Switching SOA Capability
• Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . 330ns
• Short Circuit Rating at TJ = 150oC. . . . . . . . . . .. 10s
• Low Conduction Loss


Specifications

                                                                                                                             ALL TYPES        UNITS
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . .  . . . .. . . .BVCES                    600                  V
Collector Current Continuous
    At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . .  IC25                     40                    A
    At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . . . IC110                     20                    A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . .. .ICM                     80                    A
Gate-Emitter Voltage Continuous . . . . . . . . . . . . . . . . .  . . . . . . . . VGES                     ±20                  V
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . .. . . . . .  . VGEM                     ±30                  V
Switching Safe Operating Area at TJ = 150oC, Fig. 12 . . . . . . . .. . .SSOA                 80A at 600           V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . .  . . . . PD                     164                  W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . .  . . . . . . . .                      1.32               W/oC
Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . EARV                      100                 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . TJ, TSTG                 -40 to 150          oC
Maximum Lead Temperature for Soldering. . . . . . . . . . . .  . . . . . . . . . .TL                       260               oC
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . .  . . . . . tSC                       10                  ms
NOTES:
   1. Pulse width limited by maximum junction temperature.
   2. VCE(PK) = 440V, TJ = 150oC, RGE = 10W. 


Description

This HGTP20N60C3R family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications. These HGTP20N60C3R devices demonstrate RUGGED performance capability when subjected to harsh SHORT CIRCUIT WITHSTAND TIME (SCWT) conditions. The parts have ULTRAFAST (UFS) switching speed while the on-state conduction losses have been kept at a low level.

The electrical specifications of HGTP20N60C3R  include typical Turn-On and Turn-Off dv/dt ratings. These ratings and the Turn-On ratings include the effect of the diode in the test circuit (Figure 16). The data was obtained with the diode at the same TJ as the IGBT under test.Formerly Developmental Type TA49047.




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