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HGTP2N120CND
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Package Cooled:7850 D/C:Intersil

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Part Number: HGTP2N120CND

Package Cooled: 7850

D/C: Intersil

Description: The HGTP2N120CND and HGT1S2N120CNDS are Non-Punch Through (NPT) IGBT designs. They are new members of ...

HGTP2N120CND General Description

The HGTP2N120CND and HGT1S2N120CNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49313. The Diode used is the development type TA49056 (Part number RHRD4120).

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly Developmental Type TA49311.

HGTP2N120CND Maximum Ratings

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV_CES1200 V
Collector Current Continuous At T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C2513 A
Collector Current Continuous At T_C = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C110 7 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. ICM 20 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..V_GES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM ±30 V
Switching Safe Operating Area at T_J = 150 (Figure 2) . . . . . . . . . . SSOA 13A at 1200V
Power Dissipation Total at T_C= 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P_D 104 W
Power Dissipation Derating T_C> 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . T_J, T_STG -55 to 150
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L 300
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg260
Short Circuit Withstand Time (Note 2) at V_GE = 15V. . . . . . . . . . . . . . . . . . . . . . . .t_SC 8 µs

HGTP2N120CND Features

• 13A, 1200V, T_C = 25
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 360ns at T_J = 150
• Short Circuit Rating
• Low Conduction Loss
• Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model
www.intersil.com
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"

HGTP2N120CND Connection Diagram

HGTP2N120CND datasheet

HGTP2N120CND
PDF/DataSheet Download

Datasheet: HGTP2N120CND
File Size: 95188 KB
Manufacturer: INTERSIL [Intersil Corporation]
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