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HGTP3N60C3

Features: • 6A, 600V at TC = 25• 600V Switching SOA Capability• Typical Fall Time. . . . . . . . . . . . . . . . 130ns at TJ = 150• Short Circuit Rating• Low Conduction Loss• Related Literature- TB334 Guidelines for Soldering Surface MountComponents to PC Board...

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SeekIC No. : 004362211 Detail

HGTP3N60C3: Features: • 6A, 600V at TC = 25• 600V Switching SOA Capability• Typical Fall Time. . . . . . . . . . . . . . . . 130ns at TJ = 150• Short Circuit Rating• Low Conduction...

HGTP3N60C3 Data Sheet

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Part Number:
HGTP3N60C3
Supply Ability:
5000

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Product Details

Description



Features:

• 6A, 600V at TC = 25
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 130ns at TJ = 150
• Short Circuit Rating
• Low Conduction Loss
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"


Pinout

Connection Diagram


Specifications

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 600 V
Collector Current Continuous At TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 6 A
Collector Current Continuous At TC = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 3 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM 24 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM ±30 V
Switching Safe Operating Area at TJ = 150 (Figure 14) . . . . . . . . . . . . SSOA 18A at 480V
Power Dissipation Total at TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 33 W
Power Dissipation Derating TC > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.27 W/
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV 100 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . .TJ, TSTG -40 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL 300
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 260
Short Circuit Withstand Time (Note 2) at VGE = 10V (Figure 6) . . . . . . . . . . . . . . . . . .tSC 8 µs


Description

The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These HGTD3N60C3S and the HGTP3N60C3  devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 and 150.

The HGTD3N60C3S and the HGTP3N60C3  IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly developmental type TA49113.




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