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HGTP3N60C3
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General Description

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MFG:HARRIS Package Cooled:DIP/SOP D/C:08+

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Part Number: HGTP3N60C3

MFG: HARRIS

Package Cooled: DIP/SOP

D/C: 08+

Description: The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best fea...

HGTP3N60C3 General Description

The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 and 150.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly developmental type TA49113.

HGTP3N60C3 Maximum Ratings

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV_CES 600 V
Collector Current Continuous At T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25 6 A
Collector Current Continuous At T_C = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C1103 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_CM 24 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GEM ±30 V
Switching Safe Operating Area at T_J = 150 (Figure 14) . . . . . . . . . . . . SSOA 18A at 480V
Power Dissipation Total at T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D 33 W
Power Dissipation Derating T_C > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.27 W/
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_ARV 100 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . .T_J, T_STG -40 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_L 300
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_pkg 260
Short Circuit Withstand Time (Note 2) at V_GE = 10V (Figure 6) . . . . . . . . . . . . . . . . . .t_SC 8 µs

HGTP3N60C3 Features

• 6A, 600V at T_C = 25
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 130ns at T_J = 150
• Short Circuit Rating
• Low Conduction Loss
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"

HGTP3N60C3 Connection Diagram

HGTP3N60C3 datasheet

HGTP3N60C3
PDF/DataSheet Download

Datasheet: HGTP3N60C3
File Size: 249192 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Click here to Download

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Related Part Number

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