HIP2101

Features: • Drives N-Channel MOSFET Half Bridge• SOIC, EPSOIC, QFN and DFN Package Options• SOIC, EPSOIC and DFN Packages Compliant with 100V Conductor Spacing Guidelines of IPC-2221• Pb-free Product Available (RoHS Compliant)• Bootstrap Supply Max Voltage to 114VDC&#...

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HIP2101 Picture
SeekIC No. : 004362689 Detail

HIP2101: Features: • Drives N-Channel MOSFET Half Bridge• SOIC, EPSOIC, QFN and DFN Package Options• SOIC, EPSOIC and DFN Packages Compliant with 100V Conductor Spacing Guidelines of IPC-22...

floor Price/Ceiling Price

Part Number:
HIP2101
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/4

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Product Details

Description



Features:

• Drives N-Channel MOSFET Half Bridge
• SOIC, EPSOIC, QFN and DFN Package Options
• SOIC, EPSOIC and DFN Packages Compliant with 100V Conductor Spacing Guidelines of IPC-2221
• Pb-free Product Available (RoHS Compliant)
• Bootstrap Supply Max Voltage to 114VDC
• On-Chip 1 Bootstrap Diode
• Fast Propagation Times for Multi-MHz Circuits
• Drives 1000pF Load with Rise and Fall Times Typ. 10ns
• TTL/CMOS Input Thresholds Increase Flexibility
• Independent Inputs for Non-Half Bridge Topologies
• No Start-Up Problems
• Outputs Unaffected by Supply Glitches, HS Ringing Below Ground, or HS Slewing at High dv/dt
• Low Power Consumption
• Wide Supply Range
• Supply Undervoltage Protection
• 3 Output Driver Resistance
• QFN/DFN Package:
- Compliant to JEDEC PUB95 MO-220 QFN - Quad Flat No Leads - Package Outline
- Near Chip Scale Package footprint, which improves PCB efficiency and has a thinner profile





Application

• Telecom Half Bridge Power Supplies
• Avionics DC-DC Converters
• Two-Switch Forward Converters
• Active Clamp Forward Converters





Pinout

  Connection Diagram




Specifications

Supply Voltage, VDD, VHB-VHS (Notes 3, 4) . . . . . .... . . -0.3V to 18V
LI and HI Voltages (Note 4) . . . . . . . . . . . . . . . . . . . . . -0.3V to 7.0V
Voltage on LO (Note 4) . . . . . . . . . . . . . . ... . . . . -0.3V to VDD +0.3V
Voltage on HO (Note 4) . . . . . . . . . . . . ... . . VHS -0.3V to VHB +0.3V
Voltage on HS (Continuous) (Note 4) . . . . . . . . .. . . . . . -1V to 110V
Voltage on HB (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +118V
Average Current in VDD to HB diode. . . . . . . . . . . .. . . . . . . . 100mA
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . .... Class 1 (1kV)





Description

The HIP2101 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. HIP2101  is equivalent to the HIP2100 with the added advantage of full TTL/CMOS compatible logic input pins. The low-side and high-side gate drivers are independently controlled and matched to 13ns. This gives users total control over dead-time for specific power circuit topologies. Undervoltage protection on both the low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the lowpower benefits of pulsed operation with the safety of DC operation. Unlike some competitors, the high-side output returns to its correct state after a momentary undervoltage of the high-side supply.




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