Purchase HM5117805B, In-stock HM5117805B From SeekIC.
Part Number: HM5117805B
Description: The Hitachi HM5117805B is a CMOS dynamic RAM organized 2,097,152-word × 8-bi...
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HM5117805B
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DataSheet
General Description
HM5117805B General Description
The Hitachi HM5117805B is a CMOS dynamic RAM organized 2,097,152-word × 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805B offers Extended Data Out (EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805B to be packaged in standard 28-pin plastic SOJ and 28-pin TSOP.
HM5117805B Maximum Ratings
| Parameter |
Symbol |
Value |
Unit |
| Voltage on any pin relative to VSS |
VT |
1.0 to + 7.0 |
V |
| Supply voltage relative to VSS |
VCC |
1.0 to + 7.0 |
V |
| Short circuit output current |
Iout |
50 |
mA |
| Power dissipation |
PT |
1.0 |
W |
| Operating temperature |
Topr |
0 to +70 |
°C |
| Storage temperature |
Tstg |
55 to +125 |
°C |
HM5117805B Features
` Single 5 V (±10%)
` High speed
- Access time: 60 ns/70 ns/80 ns (max)
` Low power dissipation
- Active mode: 660mW/605 mW/550 mW(max)
- Standby mode : 11 mW (max)
: 0.83 mW (max) (L-version)
` EDO page mode capability
` Long refresh period
- 2048 refresh cycles : 32 ms
: 128 ms (L-version)
` 4 variations of refresh
- RAS-only refresh
- CAS-before-RAS refresh
- Hidden refresh
- Self refresh (L-version)
` Battery backup operation (L-version)
` High speed
- Access time: 60 ns/70 ns/80 ns (max)
` Low power dissipation
- Active mode: 660mW/605 mW/550 mW(max)
- Standby mode : 11 mW (max)
: 0.83 mW (max) (L-version)
` EDO page mode capability
` Long refresh period
- 2048 refresh cycles : 32 ms
: 128 ms (L-version)
` 4 variations of refresh
- RAS-only refresh
- CAS-before-RAS refresh
- Hidden refresh
- Self refresh (L-version)
` Battery backup operation (L-version)
HM5117805B Series
PDF/DataSheet Download
- Datasheet: HM5117805B Series
- File Size: 499089 KB
- Manufacturer: hitachi
- Click here to Download
- ·HM50-3R9MLF
- BITECH [Bi technologies]
- Axially Leaded Miniature Power Inductors
- 259167 KB
- ·HM50-6R8KLF
- BITECH [Bi technologies]
- Axially Leaded Miniature Power Inductors
- 259167 KB
- ·HM511000AZP-8
- x1 Fast Page Mode DRAM
- 376789 KB
- ·HM5112805F-6
- HITACHI [Hitachi Semiconductor]
- 128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
- 492338 KB
- ·HM5112805FLTD-6
- HITACHI [Hitachi Semiconductor]
- 128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
- 492338 KB
- ·HM5112805FTD-6
- HITACHI [Hitachi Semiconductor]
- 128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
- 492338 KB
- ·HM5113805F-6
- HITACHI [Hitachi Semiconductor]
- 128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
- 492338 KB
- ·HM5113805FLTD-6
- HITACHI [Hitachi Semiconductor]
- 128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
- 492338 KB
HM5117805B Relative Products
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The HM 5117805 i s a C M OS dynam i c R AM orga ni ze d 2, 097,152-w ord ´ 8-bi t . It em pl oys t he m os t adva nce d C M OS t ec hnology for hi gh per form a nce and l ow powe r. It off ers Ext ende d Da ta Out (ED O) P age M ode as a hi gh s pee d ...
HM5117800B
The Hitachi HM5117800B is a CMOS dynamic RAM organized 2,097,152-word × 8-bit. It employs the most advanced CMOS technology for high performance and low power. It offers Fast Page Mode as a high speed access mode. Multiplexed address input permits the HM5117...
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The HM5117405 Series has the following features including Single 5 V ( 10%);Access time: 50 ns/60 ns/70 ns (max);Power dissipationActive mode : 495 mW/440 mW/385 mW (max) (HM5116405 Series),: 550 mW/495 mW/440 mW (max) (HM5117405 Series),Standby mode : 11 m...
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The Hitachi HM5116405 Series, HM5117405 Series are CMOS dynamic RAMs organized 4,194,304-word × 4-bit. They employ the most advanced CMOS technology for high performance and low power. The HM5116405 Series, HM5117405 Series offer Extended Data Out (EDO) Page...
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