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HM51W17805B

Features: · Single 3.3 V (±0.3 V)· High speed- Access time: 60 ns/70 ns/80 ns (max)· Low power dissipation-Active mode: 432mW/396 mW/360 mW(max)-Standby mode : 7.2 mW (max): 0.54 mW (max) (L-version)· EDO page mode capability· Long refresh period-2048 refresh cycles : 32 ms: 128 ms (L-version)· 4 ...

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SeekIC No. : 004363407 Detail

HM51W17805B: Features: · Single 3.3 V (±0.3 V)· High speed- Access time: 60 ns/70 ns/80 ns (max)· Low power dissipation-Active mode: 432mW/396 mW/360 mW(max)-Standby mode : 7.2 mW (max): 0.54 mW (max) (L-version...

HM51W17805B Data Sheet

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Part Number:
HM51W17805B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·  Single 3.3 V (±0.3 V)
·  High speed
-  Access time: 60 ns/70 ns/80 ns (max)
·  Low power dissipation
- Active mode: 432mW/396 mW/360 mW(max)
- Standby mode : 7.2 mW (max)
: 0.54 mW (max) (L-version)
·  EDO page mode capability
·  Long refresh period
-2048 refresh cycles : 32 ms
: 128 ms (L-version)
·  4 variations of refresh
- RAS-only refresh
-CAS-before-RAS refresh
- Hidden refresh
-Self refresh (L-version)
·  Battery backup operation (L-version)


Pinout

Connection Diagram


Specifications

Parameter Symbol Value Unit
Voltage on any pin relative to VSS VT 0.5 to VCC + 0.5 ( 4.6 V (max)) V
Supply voltage relative to VSS VCC 0.5 to +4.6 V
Short circuit output current Iout 50 mA
Power dissipation PT 1.0 W
Operating temperature Topr 0 to +70
Storage temperature Tstg 55 to +125



Description

The Hitachi HM51W17805B is a CMOS dynamic RAM organized 2,097,152-word× 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W17805B offers Extended Data Out (EDO) Page Mode as a high speed access mode. Multiplexed address input permits the M51W17805B to be packaged in standard 28-pin plastic SOJ and 28-pin TSOP.




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