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HM51W18165B

Features: • Single 3.3 V (±0.3 V)• High speed-Access time: 60 ns/70 ns/80 ns (max)• Low power dissipation-Active mode: 468 mW/414 mW/360 mW (max) (HM51W16165B Series): 666 mW/594 mW/540 mW (max) (HM51W18165B Series)-Standby mode : 7.2 mW (max): 0.54 mW (max) (L-version)• ED...

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SeekIC No. : 004363413 Detail

HM51W18165B: Features: • Single 3.3 V (±0.3 V)• High speed-Access time: 60 ns/70 ns/80 ns (max)• Low power dissipation-Active mode: 468 mW/414 mW/360 mW (max) (HM51W16165B Series): 666 mW/594 m...

HM51W18165B Data Sheet

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Part Number:
HM51W18165B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Single 3.3 V (±0.3 V)
• High speed
- Access time: 60 ns/70 ns/80 ns (max)
• Low power dissipation
- Active mode: 468 mW/414 mW/360 mW (max) (HM51W16165B Series)
: 666 mW/594 mW/540 mW (max) (HM51W18165B Series)
- Standby mode : 7.2 mW (max)
: 0.54 mW (max) (L-version)
• EDO page mode capability
• Long refresh period
-4096 refresh cycles : 64 ms (HM51W16165B Series)
: 128 ms (L-version)
- 1024 refresh cycles : 16 ms (HM51W18165B Series)
: 128 ms (L-version)


Pinout

Connection Diagram


Specifications

Parameter Symbol Value Unit
Voltage on any pin relative to VSS VT 0.5 to VCC + 0.5 ( 4.6 V (max)) V
Supply voltage relative to VSS VCC 0.5 to +4.6 V
Short circuit output current Iout 50 mA
Power dissipation PT 1.0 W
Operating temperature Topr 0 to +70
Storage temperature Tstg 55 to +125



Description

The Hitachi HM51W16165B Series, HM51W18165B Series are CMOS dynamic RAMs organized as 1,048,576-word × 16-bit. They employ the most advanced CMOS technology for high performance and low power. HM51W16165B Series, HM51W18165B Series offer Extended Data Out (EDO) Page Mode as a high speed access mode.




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