Features: · Single 3.3 V (±0.15 V) (HM51W4260C-6R) (±0.3 V) (HM51W4260C-7/8)· High speed-Access time: 60 ns/70 ns/80 ns (max)· Low power dissipation-Active mode: 468 mW/396 mW/342 mW (max)-Standby mode: 6.9 mW (max) (HM51W4260C-6R) 7.2 mW (max) (HM51W4260C-7/8) 0.35 mW (max) (L-version) (HM51W4260...
HM51W4260C: Features: · Single 3.3 V (±0.15 V) (HM51W4260C-6R) (±0.3 V) (HM51W4260C-7/8)· High speed-Access time: 60 ns/70 ns/80 ns (max)· Low power dissipation-Active mode: 468 mW/396 mW/342 mW (max)-Standby m...
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DescriptionThe HM511000A series is a kind of CMOS dynamic RAM organized 1048576-word*1-bit. It has...

| Parameter | Symbol | Value | Unit |
| Voltage on any pin relative to VSS | VT | 0.5 to +4.6 | V |
| Supply voltage relative to VSS | VCC | 0.5 to +4.6 | V |
| Short circuit output current | Iout | 50 | mA |
| Power dissipation | PT | 1.0 | W |
| Operating temperature | Topr | 0 to +70 | |
| Storage temperature | Tstg | 55 to +125 |
The Hitachi HM51W4260C is CMOS dynamic RAM organized as 262,144-word × 16-bit. HM51W4260C has realized higher density, higher performance and various functions by employing 0.8 mm CMOS process technology and some new CMOS circuit design technologies. It offers Fast Page Mode as a high speed access mode. Multiplexed address input permits the product to be packaged in standard 400-mil 44-pin plastic TSOPII. Internal refresh timer enables self refresh operation.