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Part Number: HM51W4400B

 

 

 

 

Description: The Hitachi HM51W4400B is a CMOS dynamic RAM organized 1,048,576-word × 4-bi...


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HM51W4400B General Description


The Hitachi HM51W4400B is a CMOS dynamic RAM organized 1,048,576-word × 4-bit. HM51W4400B has realized higher density, higher performance and various functions by employing 0.8 mm CMOS process technology and some new CMOS circuit design technologies. The HM51W4400B offers Fast Page Mode as a high speed access mode. Multiplexed address input permits the HM51W4400B to be packaged in standard 300-mil 26-pin plastic SOJ and standard 300-mil 26-pin plastic TSOP II.

HM51W4400B Maximum Ratings

Parameter Symbol Value Unit
Voltage on any pin relative to VSS VT 0.5 to +4.6 V
Supply voltage relative to VSS VCC 0.5 to +4.6 V
Short circuit output current Iout 50 mA
Power dissipation PT 1.0 W
Operating temperature Topr 0 to +70
Storage temperature Tstg 55 to +125

HM51W4400B Features

·  Single 3.3 V (± 0.3 V)
·  High speed
- Access time: 70 ns/80 ns (max)
·  Low power dissipation
- Active mode: 252 mW/216 mW (max)
- Standby mode: 7.2 mW (max) 0.18 mW (max) (L-version)
·  Fast page mode capability
·  1024 refresh cycles : 16 ms
: 128 ms (L-version)
·  4 variations of refresh
RAS-only refresh
CAS-before-RAS refresh
- Hidden refresh
-Self refresh (L-version)
·  Test function
·  Battery backup operation (L-version)

HM51W4400B Connection Diagram

HM51W4400B  Connection Diagram

HM51W4400B datasheet

HM50-3R9MLF
PDF/DataSheet Download

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