Features: ` Single 3.3 V (±0.3 V) (HM51W4405BS-7)` Single 3.3 V (+0.3 V/0.15 V) (HM51W4405BS-6R)` High speed-Access time: 60/70 ns (max)` Low power dissipation-Active mode: 288/252 mW (max)-Standby mode: 7.2 mW (max)` EDO page mode capability` 1024 refresh cycles : 16 ms` 3 variations of refresh-R...
HM51W4405BS: Features: ` Single 3.3 V (±0.3 V) (HM51W4405BS-7)` Single 3.3 V (+0.3 V/0.15 V) (HM51W4405BS-6R)` High speed-Access time: 60/70 ns (max)` Low power dissipation-Active mode: 288/252 mW (max)-Standby ...
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DescriptionThe HM511000A series is a kind of CMOS dynamic RAM organized 1048576-word*1-bit. It has...
Parameter | Symbol | Value | Unit |
Voltage on any pin relative to VSS | VT | 0.5 to +4.6 | V |
Supply voltage relative to VSS | VCC | 0.5 to +4.6 | V |
Short circuit output current | Iout | 50 | mA |
Power dissipation | PT | 1.0 | W |
Operating temperature | Topr | 0 to +70 | |
Storage temperature | Tstg | 55 to +125 |
The Hitachi HM51W4405BS Series is a CMOS dynamic RAM organized 1,048,576-word×4-bit.
HM51W4405BS Series has realized higher density, higher performance and various functions by employing 0.8 mm CMOS process technology and some new CMOS circuit design technologies. The product offers Extended Data Out (EDO) Page Mode as a high speed access mode. It has the package variations of standard 26-pin plastic SOJ.