HM5216165TT-10H

The HM5216165TT-10H is designed as a 524,288-word x 16-bit x 2-bank synchronous dynamic RAM. It is offered in 2 banks for improved performance.

It has twelve features. (1)3.3V power supply. (2)Clock frequency 100MHz. (3)LVTTL interface. (4)Single pulsed RAS. (5)2 banks can operates simultaneously and independently. (6)Burst read/write operation and burst read/single write operation capability. (7)Programmable burst length 1/2/4/8/full page. (8)2 variations of burst sequence. (9)Programmable CAS latency 1. (10)Byte control by DQMU and DQML. (11)Refresh cycles: 4096 refresh cycles/64ms. (12)2 variations of refresh which means auto refresh and self refresh. Those are all the main features.

Some absolute maximum ratings have been concluded into several points as follow. (1)Its voltage on any pin relative to Vss would be from -1.0 to +4.6V. (2)Its supply voltage relative to Vss would be from -1.0 to +4.6V. (3)Its short circuit output current would be 50mA. (4)Its power dissipation would be 1.0W. (5)Its operating temperature range would be from 0°C to +70°C. (6)Its storage temperature range would be from -55°C to +125°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics are concluded as follow. (1)Its operating current would be max 130mA. (2)Its standby current (bank disable) would be max 3mA. (3)Its active standby current L-version would be max 7mA. (4)Its input leakage current would be min -10uA and max 10uA. (5)Its output leakage current would be min -10uA and max 10uA. (6)Its output high voltage would be min 2.4V. (7)Its output low voltage would be max 0.4V. (8)Its input capacitance address would be min 2pF and max 5pF. (9)Its input capacitance signals would be min 2pF and max 5pF. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!