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HM6264BI

Features: • Single 5 V supply: 5 V ± 10%• Access time: 100/120 ns (max)• Power dissipation: Standby: 10 µW (typ) Operation: 15 mW (typ) (f = 1 MHz)• Completely static memory No clock or timing strobe required• Equal access and cycle times...

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SeekIC No. : 004363503 Detail

HM6264BI: Features: • Single 5 V supply: 5 V ± 10%• Access time: 100/120 ns (max)• Power dissipation: Standby: 10 µW (typ) Operation: 15 mW (typ) (f = 1 MHz)• Com...

HM6264BI Data Sheet

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Part Number:
HM6264BI
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

•  Single 5 V supply:  5 V ± 10%
•  Access time:  100/120 ns (max)
•  Power dissipation:
  Standby:  10 µW (typ)
 Operation:  15 mW (typ) (f = 1 MHz)
•  Completely static memory
 No clock or timing strobe required
•  Equal access and cycle times
•  Common data input and output
 Three state output
•  Directly TTL compatible
 All inputs and outputs
•  Battery backup operation capability
•  Operating temperature range:  40˚C to +85˚C


Pinout

Connection Diagram


Specifications

Parameter Symbol Value Unit
Power supply voltage VCC 0.5 to +7.0 V
Voltage on any pin relative to VSS VT 0.5* 1 to VCC + 0.3* 2 V
Power dissipation PT 1.0 W
Operating temperature Topr 40 to +85
Storage temperature Tstg 55 to +125
Storage temperature under bias Tbias 40 to +85
Notes: 1. Relative to VSS
            2. VT min:  3.0 V for pulse half-width 50 ns
            3. Maximum voltage is 7.0 V


Description

The Hitachi HM6264BI is 64k-bit static RAM organized 8-kword × 8-bit.  HM6264BI realizes higher performance and low power consumption by 1.5 µm CMOS process technology.  The device, packaged in 450 mil SOP (foot print pitch width), 600 mil plastic DIP, is available for high density mounting.




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