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MFG:HM  D/C:09+  

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Part Number: HM628511H

 

MFG: HM

 

D/C: 09+

Description: · Single 5.0 V supply : 5.0 V ± 10 %· Access time 10 /12 /15 ns (max)· Completely static memo...


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HM628511H General Description


·  Single 5.0 V supply : 5.0 V ± 10 %
·  Access time 10 /12 /15 ns (max)
·  Completely static memory
-   No clock or timing strobe required
·  Equal access and cycle times
·  Directly TTL compatible
  - All inputs and outputs
·  Operating current : 180 / 160 / 140 mA (max)
·  TTL standby current : 70 / 60 / 50 mA (max)
·  CMOS standby current : 5 mA (max)
                         : 1.2 mA (max) (L-version)
·  Data retension current: 0.8 mA (max) (L-version)
·  Data retension voltage: 2 V (min) (L-version)
·  Center VCC and VSS type pinout

HM628511H Maximum Ratings

Parameter Symbol Value Unit
Supply voltage relative to VSS VCC 0.5 to + 7.0 V
Voltage on any pin relative to VSS VT 0.5*1 to VCC + 0.5*2 V
Power dissipation PT 1.0 W
Operating temperature Topr 0 to +70
Storage temperature Tstg 55 to +125
Storage temperature under bias Tbias 10 to +85

HM628511H Features

The HM628511H Series is a 4-Mbit high speed static RAM organized 512-k word ´ 8-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 36-pin plastic SOJ.

HM628511H Connection Diagram

HM628511H  Connection Diagram

HM628511H datasheet

HM628511H Series
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