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HM628511H

Features: The HM628511H Series is a 4-Mbit high speed static RAM organized 512-k word ´ 8-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology. It is most appropriate for the application ...

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SeekIC No. : 004363514 Detail

HM628511H: Features: The HM628511H Series is a 4-Mbit high speed static RAM organized 512-k word ´ 8-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor ...

HM628511H Data Sheet

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Part Number:
HM628511H
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

The HM628511H Series is a 4-Mbit high speed static RAM organized 512-k word ´ 8-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 36-pin plastic SOJ.


Pinout

Connection Diagram


Specifications

Parameter Symbol Value Unit
Supply voltage relative to VSS VCC 0.5 to + 7.0 V
Voltage on any pin relative to VSS VT 0.5*1 to VCC + 0.5*2 V
Power dissipation PT 1.0 W
Operating temperature Topr 0 to +70
Storage temperature Tstg 55 to +125
Storage temperature under bias Tbias 10 to +85



Description

The HM628511H features:

·  Single 5.0 V supply : 5.0 V ± 10 %
·  Access time 10 /12 /15 ns (max)
·  Completely static memory
-   No clock or timing strobe required
·  Equal access and cycle times
·  Directly TTL compatible
  - All inputs and outputs
·  Operating current : 180 / 160 / 140 mA (max)
·  TTL standby current : 70 / 60 / 50 mA (max)
·  CMOS standby current : 5 mA (max)
                         : 1.2 mA (max) (L-version)
·  Data retension current: 0.8 mA (max) (L-version)
·  Data retension voltage: 2 V (min) (L-version)
·  Center VCC and VSS type pinout




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