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Part Number: HM628512B
Description: The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher den...
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HM628512B
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DataSheet
General Description
HM628512B General Description
The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density,higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil plastic DIP,is available for high density mounting. The HM628512B is suitable for battery backup system.
HM628512B Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Power supply voltage | VCC | 0.5 to +7.0 | V |
| Voltage on any pin relative to VSS | VT | 0.5* 1 to VCC + 0.3* 2 | V |
| Power dissipation | PT | 1.0 | W |
| Operating temperature | Topr | 20 to +70 | |
| Storage temperature | Tstg | 55 to +125 | |
| Storage temperature under bias | Tbias | 20 to +85 |
2. Maximum voltage is 7.0 V
HM628512B Features
• Single 5 V supply
• Access time: 55/70 ns (max)
• Power dissipation
Active: 50 mW/MHz (typ)
Standby: 10 µW (typ)
• Completely static memory. No clock or timing strobe required
• Equal access and cycle times
• Common data input and output: Three state output
• Directly TTL compatible: All inputs and outputs
• Battery backup operation
• Access time: 55/70 ns (max)
• Power dissipation
Active: 50 mW/MHz (typ)
Standby: 10 µW (typ)
• Completely static memory. No clock or timing strobe required
• Equal access and cycle times
• Common data input and output: Three state output
• Directly TTL compatible: All inputs and outputs
• Battery backup operation
HM628512B Connection Diagram
HM628512BFP
PDF/DataSheet Download
- Datasheet: HM628512BFP
- File Size: 59458 KB
- Manufacturer: HITACHI [Hitachi Semiconductor]
- Click here to Download
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HM628512B Relative Products
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The Hitachi HM628512A is a 4-Mbit static RAM organized 512-kword×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.5 mm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or...
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