HM62W16256B Selling Leads, Price trend, HM62W16256B DataSheet download, circuit diagram from SeekIC.com

Features: • Single 3.3 V supply: 3.3 V ± 0.3 V• Fast access time: 55 ns/70 ns (max)• Power dissipation: -Active: 9.9 mW (typ) -Standby: 3.3 W (typ)• Completely static memory. -No clock or timing strobe required• Equal access and cycle times• Common data input an...

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SeekIC No. : 004363559 Detail

HM62W16256B: Features: • Single 3.3 V supply: 3.3 V ± 0.3 V• Fast access time: 55 ns/70 ns (max)• Power dissipation: -Active: 9.9 mW (typ) -Standby: 3.3 W (typ)• Completely static memory....

HM62W16256B Data Sheet

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Part Number:: HM62W16256B
Supply Ability:: 5000

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1~5000

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Upload time: 2024/4/28

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Recent History
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Product Details

Description

Features:

• Single 3.3 V supply: 3.3 V ± 0.3 V
• Fast access time: 55 ns/70 ns (max)
• Power dissipation:
   - Active: 9.9 mW (typ)
   - Standby: 3.3 W (typ)
• Completely static memory.
   - No clock or timing strobe required
• Equal access and cycle times
• Common data input and output.
   - Three state output
• Battery backup operation.
   - 2 chip selection for battery backup

Pinout

Connection Diagram

Specifications

Parameter	Symbol	Value	Unit
Power supply voltage relative to VSS	VCC	0.5 to +4.6	V
Terminal voltage on any pin relative to VSS	V_T	0.5^1 to V_CC + 0.3^2	V
Power dissipation	P_T	1.0	W
Storage temperature range	T_stg	55 to +125	°C
Storage temperature range under bias	T_bias	10 to +85	°C

Notes:
1. VT min: 3.0 V for pulse half-width 30 ns.
2. Maximum voltage is +4.6 V.

Description

The Hitachi HM62W16256B Series is 4-Mbit static RAM organized 262,144-word × 16-bit. HM62W16256B Series has realized higher density, higher erformance and low power consumption by employing Hi-CMOS process technology. It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in standard 44-pin plastic TSOPII.

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HM62W16256B

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