HM71V832

Features: ` Single 3 V power supply (2.7 V to 3.6 V)` Fully synchronous operation - 150 ns Read access - 235 ns Read/write cycle time - 1012 Read/write cycle endurance` Low power consumption - Active: 20 mA (typ) - Standby: 15 A (typ)` JEDEC standard 21-C write protection (Entire memory) and Selec...

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HM71V832 Picture
SeekIC No. : 004363626 Detail

HM71V832: Features: ` Single 3 V power supply (2.7 V to 3.6 V)` Fully synchronous operation - 150 ns Read access - 235 ns Read/write cycle time - 1012 Read/write cycle endurance` Low power consumption - Activ...

floor Price/Ceiling Price

Part Number:
HM71V832
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Description



Features:

`  Single 3 V power supply (2.7 V to 3.6 V)
`  Fully synchronous operation
     - 150 ns Read access
     - 235 ns Read/write cycle time
     - 1012 Read/write cycle endurance
`  Low power consumption
     - Active: 20 mA (typ)
     - Standby: 15 A (typ)
`  JEDEC standard 21-C write protection (Entire memory) and Selectable 4K byte write protection
`  10 year data retention
`  CMOS compatible I/O pins
`  28 pin SOP and TSOP packages
`  0° to +70°C ambient operating temperature range



Pinout

  Connection Diagram




Specifications

Parameter
Symbol
Value
Unit
Power supply voltage
Vcc
-0.5 to +5.0
V
Voltage on any pin relative to Vss
VT
-0.5 to +5.0
V
Operating temperature
Topr
0 to +70
°C
Storage temperature
Tstg
-55 to +85
°C
Note: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the
device. This is a stress rating only, and the functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.



Description

The HM71V832 is a ferroelectric RAM, or FARM® memory, organized as 32k-word x 8-bit. FRAM® memory products from Hitachi combine the read/write characteristics of semiconductor RAM with nonvolatile storage. This product is manufactured in a 0.8 micron silicon gate CMOS technology with the addition of integrated thin film ferroelectric storage cells developed. The ferroelectric cells are polarized on each read or write cycle, therefore no special store or recall sequence is required. The memory is always static and nonvolatile. Hitachi's FRAMÒ products operate from a single 3 V power supply and are CMOS compatible on all inputs and outputs. The HM71V832 utilizes the JEDEC standard bytewide SRAM pinout.




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