DescriptionThe HMC-ALH310 is a three stage GaAs HEMT MMIC Low Noise Amplifier (LNA) which operates between 37 and 42 GHz. The HMC-ALH310 features 22 dB of small signal gain, 3.5 dB of noise figure and an output power of +12 dBm at 1 dB compression from a +2.5V supply voltage. All bond pads and the...
HMC-ALH310: DescriptionThe HMC-ALH310 is a three stage GaAs HEMT MMIC Low Noise Amplifier (LNA) which operates between 37 and 42 GHz. The HMC-ALH310 features 22 dB of small signal gain, 3.5 dB of noise figure a...
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Features: ·Noise Figure: 3.5 dB·Gain: 12 dB·P1dB Output Power: +13 dBm·Supply Voltage: +4V @ 45 mA...
DescriptionThe HMC-ALH311 is a GaAs MMIC HEMT Low Noise Driver Amplifier die which operates betwee...
Features: ·Noise Figure: 3 dB·Gain: 20 dB·P1dB Output Power: +12 dBm·Supply Voltage: +2.5V @ 52 mA...
The HMC-ALH310 is a three stage GaAs HEMT MMIC Low Noise Amplifier (LNA) which operates between 37 and 42 GHz. The HMC-ALH310 features 22 dB of small signal gain, 3.5 dB of noise figure and an output power of +12 dBm at 1 dB compression from a +2.5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation.
This HMC-ALH310 versatile LNA is compatible with conventional die attach methods, as well as thermocompression and thermosonic wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes..