HMC408LP3

Features:

·Gain: 20 dB
·Saturated Power: +32.5 dBm @ 27% PAE
·Single Supply Voltage: +5.0 V
·Power Down Capability
·3x3 mm Leadless SMT Package


Application

The HMC408LP3 is ideal for:
• 802.11a & HiperLAN WLAN
• UNII & Pt-Pt / Multi-Pt. Radios
• Access Point Radios


Pinout




Specifications

Collector Bias Voltage (Vcc1, Vcc2)	+5.5 Vdc
Control Voltage (Vpd)	+5.5 Vdc
RF Input Power (RFin)(Vs = Vpd = +5.0 Vdc)	+20 dBm
Junction Temperature	150
Continuous Pdiss (T = 85) (derate 72.5 mW/ above 85)	4.71 W
Thermal Resistance (junction to ground paddle)	13.8/W
Storage Temperature	-65 to +150
Operating Temperature	-40 to +85

Description

The HMC408LP3 is a 5.1 - 5.9 GHz high effi - ciency GaAs InGaP Heterojunction Bipolar Transistor (HBT) Power Amplifi er MMIC which offers +30 dBm P1dB. The amplifi er provides 20 dB of gain, +32.5 dBm of saturated power, and 27% PAE from a +5.0V supply voltage. The input is internally matched to 50 Ohms while the output requires a minimum of external components. Vpd can be used for full power down or RF output power/current control. The HMC408LP3 amplifier is packaged in a low cost, 3x3 mm leadless surface mount package with an exposed base for improved RF and thermal performance.