HMC413QS16G

Features:

·Gain: 23 dB
·Saturated Power: +29.5 dBm
·42% PAE
·Supply Voltage: +2.75V to +5.0 V
·Power Down Capability
·Low External Part Count


Application

This amplifi er is ideal for use as a power/driver amplifi er for 1.6 - 2.2 GHz applications:
• Cellular / PCS / 3G
• Portable & Infrastructure
• Wireless Local Loop


Pinout




Specifications

Collector Bias Voltage (Vcc)	+5.5 Vdc
Control Voltage Range (Vpd1, Vpd2)	+4.0 Vdc
RF Input Power (RFin)(Vs = +5.0 Vdc, Vpd = +3.6 Vdc)	+20 dBm
Junction Temperature	150
Continuous Pdiss (T = 85) (derate 24 mW/ above 85)	1.56 W
Thermal Resistance (junction to ground paddle)	42/W
Storage Temperature	-65 to +150
Operating Temperature	-40 to +85

Description

The HMC413QS16G is a high effi ciency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifi er which operates between 1.6 and 2.2 GHz. The amplifier is packaged in a low cost, surface mount 16 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifi er provides 23 dB of gain, +29.5 dBm of saturated power at 42% PAE from a +5.0V supply voltage. The HMC413QS16G amplifier can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/current control.