HMC474MP86E

Features: `Gain: 15.5 dB`P1dB Output Power: +8 dBm`Output IP3: +22 dBm`Cascadable 50 Ohm I/Os`Single Supply: +3V to +10V`Included in the HMC-DK001 Designer's KitApplicationThe HMC474MP86 & HMC474MP86E is an ideal RF/IF gain block for:• Cellular / PCS / 3G• Fixed Wireless & WLAN...

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SeekIC No. : 004364108 Detail

HMC474MP86E: Features: `Gain: 15.5 dB`P1dB Output Power: +8 dBm`Output IP3: +22 dBm`Cascadable 50 Ohm I/Os`Single Supply: +3V to +10V`Included in the HMC-DK001 Designer's KitApplicationThe HMC474MP86 & HMC47...

floor Price/Ceiling Price

Part Number:
HMC474MP86E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/5

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Product Details

Description



Features:

`Gain: 15.5 dB
`P1dB Output Power: +8 dBm
`Output IP3: +22 dBm
`Cascadable 50 Ohm I/Os
`Single Supply: +3V to +10V
`Included in the HMC-DK001 Designer's Kit



Application

The HMC474MP86 & HMC474MP86E is an ideal RF/IF gain block for:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment



Pinout

  Connection Diagram


Specifications

Collector Bias Voltage (Vcc)

+6.0 Vdc
Collector Bias Current (Icc) 35 mA
RF Input Power (RFin)(Vcc = +2.4 Vdc) +5 dBm
Junction Temperature 150
Continuous Pdiss (T = 85 )
(derate 4.3 mW/ above 85 )
232 /W
Thermal Resistance
(junction to lead)
232 /W
Storage Temperature -65 to +150
Operating Temperature -40 to +85
ESD Sensitivity (HBM) Class 1B



Description

The HMC474MP86 & HMC474MP86E are general purpose SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifi ers covering DC to 6 GHz. This Micro-P packaged amplifi er can be used as a cascadable 50 Ohm RF/IF gain stage with up to +10 dBm output power. The HMC474MP86 & HMC474MP86E offer 15.5 dB of gain with a +22 dBm output IP3 at 850 MHz while requiring only 25 mA from a single positive supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components.




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