MFG:HITTITE Package Cooled:SOT86 D/C:06+
MFG: HITTITE
Package Cooled: SOT86
D/C: 06+
Description: The HMC474MP86 & HMC474MP86E are general purpose SiGe Heterojunction Bipolar Transistor (HBT) Gain...
The HMC474MP86 & HMC474MP86E are general purpose SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifi ers covering DC to 6 GHz. This Micro-P packaged amplifi er can be used as a cascadable 50 Ohm RF/IF gain stage with up to +10 dBm output power. The HMC474MP86 & HMC474MP86E offer 15.5 dB of gain with a +22 dBm output IP3 at 850 MHz while requiring only 25 mA from a single positive supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components.
|
Collector Bias Voltage (Vcc) |
+6.0 Vdc |
| Collector Bias Current (Icc) | 35 mA |
| RF Input Power (RFin)(Vcc = +2.4 Vdc) | +5 dBm |
| Junction Temperature | 150 |
| Continuous Pdiss (T = 85 ) (derate 4.3 mW/ above 85 ) |
232 /W |
| Thermal Resistance (junction to lead) |
232 /W |
| Storage Temperature | -65 to +150 |
| Operating Temperature | -40 to +85 |
| ESD Sensitivity (HBM) | Class 1B |
HMC1001
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The HMC474MP86 & HMC474MP86E are general purpose SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifi ers covering DC to 6 GHz. This Micro-P packaged amplifi er can be used as a cascadable 50 Ohm RF/IF gain stage with up to +10 dBm ou...
The HMC473MS8(E) is a general purpose absorptive voltage variable attenuator in an 8-lead MSOP package. The devices operate with a +3.3V supply voltage and a 0 to +3V control voltage. Unique features include a high dynamic attenuation range of up to 48 dB an...
The HMC473MS8 is an absorptive voltage variable attenuator in an 8-lead MSOP package. The device operates with a +3.3V supply voltage and a 0 to +3V control voltage. Unique features include a high dynamic attenuation range of up to 48 dB and excellent power ...
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