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Description: The HMC475ST89(E) is a InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifi er co...


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HMC475ST89E General Description


The HMC475ST89(E) is a InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifi er covering DC to 4.5 GHz. Packaged in an industry standard SOT89, the amplifi er can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +25 dBm output power. The HMC475ST89(E) offers 21.5 dB of gain and +35 dBm output IP3 at 850 MHz while requiring only 110 mA from a single positive supply. The Darlington topology results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components.

HMC475ST89E Maximum Ratings

Collector Bias Voltage (Vcc)

RF Input Power (RFin)(Vcc = +7.2 Vdc)

Junction Temperature
+8.0 Vdc

+17 dBm

150
Continuous Pdiss (T = 85 )
(derate 16.86 mW/ above 85 )
1.09 W
Thermal Resistance
(junction to lead)
59.3 /W
Storage Temperature

Operating Temperature
-65 to +150

-40 to +85

HMC475ST89E Features

·P1dB Output Power: +22 dBm
·Gain: 21.5 dB
·Output IP3: +35 dBm
·Cascadable 50 Ohm I/Os
·Single Supply: +8V to +12V
·Industry Standard SOT89 Package

HMC475ST89E Typical Application

The HMC475ST89 / HMC475ST89E is an ideal RF/IF gain block & LO or PA driver:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
• IF and RF Applications

HMC475ST89E datasheet

HMC1001
PDF/DataSheet Download

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