Purchase HMC475ST89E, In-stock HMC475ST89E From SeekIC.


Part Number: HMC475ST89E
Description: The HMC475ST89(E) is a InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifi er co...


Description: The HMC475ST89(E) is a InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifi er co...
The HMC475ST89(E) is a InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifi er covering DC to 4.5 GHz. Packaged in an industry standard SOT89, the amplifi er can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +25 dBm output power. The HMC475ST89(E) offers 21.5 dB of gain and +35 dBm output IP3 at 850 MHz while requiring only 110 mA from a single positive supply. The Darlington topology results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components.
| Collector Bias Voltage (Vcc) RF Input Power (RFin)(Vcc = +7.2 Vdc) Junction Temperature |
+8.0 Vdc +17 dBm 150 |
| Continuous Pdiss (T = 85 ) (derate 16.86 mW/ above 85 ) |
1.09 W |
| Thermal Resistance (junction to lead) |
59.3 /W |
| Storage Temperature Operating Temperature |
-65 to +150 -40 to +85 |
HMC1001
PDF/DataSheet Download








