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MFG:HITTITE D/C:07+


Part Number: HMC476SC70
MFG: HITTITE
D/C: 07+
Description: The HMC476SC70(E) is a SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifi ers co...
MFG:HITTITE D/C:07+


MFG: HITTITE
D/C: 07+
Description: The HMC476SC70(E) is a SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifi ers co...
The HMC476SC70(E) is a SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifi ers covering DC to 6 GHz. This industry standard SC70 packaged amplifi er can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +12 dBm output power. The HMC476SC70(E) offers 20 dB of gain with a +24 dBm output IP3 at 850 MHz while requiring only 35 mA from a single positive supply. The Darlington topology results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components.
| Collector Bias Voltage (Vcc) | +6.0 Vdc |
| Collector Bias Current (Icc) | 45 mA |
| RF Input Power (RFin)(Vcc = +2.4 Vdc) | +5 dBm |
| Junction Temperature | 150 |
| Continuous Pdiss (T = 85 ) (derate 9 mW/ above 85 ) |
0.504 W |
| Thermal Resistance (junction to lead) |
129/W |
| Storage Temperature | -65 to +150 |
| Operating Temperature | -40 to +85 |
HMC1001
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