HMD8M36M6EG

Features:

· Part Identification
    HMD8M36M6E----4K Cycles/64ms Ref. Solder
    HMD8M36M6EG- 4K Cycles/64ms Ref. Gold
· Access times : 50, 60ns
· High-density 32MByte design
· Single +5V ± 0.5V power supply
· JEDEC Standard pinout
· EDO mode operation
· TTL compatible inputs and outputs
· FR4-PCB design



Specifications

PARAMETER	SYMBOL	RATING
Voltage on Any Pin Relative to Vss	VIN ,OUT	-1V to 7.0V
Voltage on Vcc Supply Relative to Vss	Vcc	-1V to 7.0V
Power Dissipation	PD	6W
Storage Temperature	TSTG	-55 to 150
Short Circuit Output Current	IOS	50mA

Permanent device damage may occur if " Absolute Maximum Ratings" are exceeded. Functional operation should be
restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.


Description

The HMD8M36M6EG is a 8M x 36bit dynamic RAM high density memory module. The module consists of four CMOS 4M x 16 bit DRAMs in 50-pin TSOP packages and two CMOS 4M x 4bit Quad CAS DRAM in 28pin SOJ package mounted on a 72-pin, double-sided, FR-4-printed circuit board. A 0.1uF or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM components.

The module HMD8M36M6EG is a single In-line memory module with edge connections and is intended for mounting in to 72-pin edge connector sockets. All module components may be powered from a single 5V DC power supply and all inputs and outputs are TTL-compatible.