Features: ` HN2D01F is composed of 3 independent diodes.` Low forward voltage : VF (3) = 0.98V (typ.)` Fast reverse recovery time : trr = 1.6ns (typ.)` Small total capacitance : CT = 0.5F (typ.)Specifications Characteristic Symbol Rating Unit Maxi...
HN2D01F: Features: ` HN2D01F is composed of 3 independent diodes.` Low forward voltage : VF (3) = 0.98V (typ.)` Fast reverse recovery time : trr = 1.6ns (typ.)` Small ...
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Characteristic | Symbol | Rating | Unit |
Maximum (peak) reverse voltage | VRM | 85 | V |
Reverse voltage | VR | 80 | V |
Maximum (peak) forward current | IFM | 240* | mA |
Average forward current | IO | 80* | mA |
Surge current (10ms) | IFSM | 1* | A |
Power dissipation | P | 300 | mW |
Junction temperature | Tj | 125 | |
Storage temperature | Tstg | -55~125 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
(*) This is absolute maximum rating of single diode (Q1 or Q2 or Q3). In the case of using 2 ro 3 diodes, the absolute maximum ratings per diodes is 75 %f the single diode one.