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MFG:TOSHIBA  Package Cooled:8282  

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Part Number: HN2D01F

 

MFG: TOSHIBA

Package Cooled: 8282

 

 

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HN2D01F Maximum Ratings

Characteristic Symbol Rating Unit
Maximum (peak) reverse voltage VRM 85 V
Reverse voltage VR 80 V
Maximum (peak) forward current IFM 240* mA
Average forward current IO 80* mA
Surge current (10ms) IFSM 1* A
Power dissipation P 300 mW
Junction temperature Tj 125
Storage temperature Tstg -55~125

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

(*) This is absolute maximum rating of single diode (Q1 or Q2 or Q3). In the case of using 2 ro 3 diodes, the absolute maximum ratings per diodes is 75 %f the single diode one.

HN2D01F Features

􀁺` HN2D01F is composed of 3 independent diodes.
􀁺` Low forward voltage : VF (3) = 0.98V (typ.)
􀁺` Fast reverse recovery time : trr = 1.6ns (typ.)
􀁺` Small total capacitance : CT = 0.5F (typ.)

HN2D01F datasheet

HN2D01F
PDF/DataSheet Download

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