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MFG:TOSHIBA  Package Cooled:SOT-453  D/C:05+  

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HN2 Series Datasheet download

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Part Number: HN2D01JE

 

MFG: TOSHIBA

Package Cooled: SOT-453

D/C: 05+

 

Urgent Purchase

HN2D01JE Maximum Ratings

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse Voltage

VRM

85

V

Reverse voltage

VR

80

V

Maximum (peak) forward current

IFM

200 *

mA

Average forward current

IO

100 *

mA

Surge current (10ms)

IFSM

1 *

A

Power dissipation

P

100 **

mW

Junction temperature

Tj

150

Storage temperature

Tstg

-55~150


Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

         Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

   *: Unit rating; total rating = unit rating * 1.5.
  **: Total rating.

HN2D01JE Features

· The HN2D01JE is composed of 2 independent diodes.
· Low forward voltage           : VF (3) = 0.98V (typ.)
· Fast reverse recovery time  : trr = 1.6ns (typ.)
· Small total capacitance        : CT = 0.5pF (typ.)

HN2D01JE datasheet

HN27512
PDF/DataSheet Download

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