HN2D01JE

Features: · The HN2D01JE is composed of 2 independent diodes.· Low forward voltage : VF (3) = 0.98V (typ.)· Fast reverse recovery time: trr = 1.6ns (typ.)· Small total capacitance: CT = 0.5pF (typ.)Specifications Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage...

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SeekIC No. : 004365007 Detail

HN2D01JE: Features: · The HN2D01JE is composed of 2 independent diodes.· Low forward voltage : VF (3) = 0.98V (typ.)· Fast reverse recovery time: trr = 1.6ns (typ.)· Small total capacitance: CT = 0.5pF (typ.)...

floor Price/Ceiling Price

Part Number:
HN2D01JE
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2021/1/24

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Product Details

Description



Features:

· The HN2D01JE is composed of 2 independent diodes.
· Low forward voltage           : VF (3) = 0.98V (typ.)
· Fast reverse recovery time  : trr = 1.6ns (typ.)
· Small total capacitance        : CT = 0.5pF (typ.)



Specifications

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse Voltage

VRM

85

V

Reverse voltage

VR

80

V

Maximum (peak) forward current

IFM

200 *

mA

Average forward current

IO

100 *

mA

Surge current (10ms)

IFSM

1 *

A

Power dissipation

P

100 **

mW

Junction temperature

Tj

150

Storage temperature

Tstg

-55~150


Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

         Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

   *: Unit rating; total rating = unit rating * 1.5.
  **: Total rating.




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