Position: Home  > All Categories> Integrated Circuits (ICs) > HN2D01JE

HN2D01JE

Features: · The HN2D01JE is composed of 2 independent diodes.· Low forward voltage : VF (3) = 0.98V (typ.)· Fast reverse recovery time: trr = 1.6ns (typ.)· Small total capacitance: CT = 0.5pF (typ.)Specifications Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage...

product image

HN2D01JE Picture
See larger image
SeekIC No. : 004365007 Detail

HN2D01JE: Features: · The HN2D01JE is composed of 2 independent diodes.· Low forward voltage : VF (3) = 0.98V (typ.)· Fast reverse recovery time: trr = 1.6ns (typ.)· Small total capacitance: CT = 0.5pF (typ.)...

HN2D01JE Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
HN2D01JE
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/8

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

· The HN2D01JE is composed of 2 independent diodes.
· Low forward voltage           : VF (3) = 0.98V (typ.)
· Fast reverse recovery time  : trr = 1.6ns (typ.)
· Small total capacitance        : CT = 0.5pF (typ.)


Specifications

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse Voltage

VRM

85

V

Reverse voltage

VR

80

V

Maximum (peak) forward current

IFM

200 *

mA

Average forward current

IO

100 *

mA

Surge current (10ms)

IFSM

1 *

A

Power dissipation

P

100 **

mW

Junction temperature

Tj

150

Storage temperature

Tstg

-55~150


Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

         Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

   *: Unit rating; total rating = unit rating * 1.5.
  **: Total rating.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Prototyping Products
AVT4168
DE1
Test Equipment
TOP853
TOP2005
Optoelectronics
SFH7770
TLP423J
Transformers
TM-09210
BV222-1-00992
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
View more