HN2D01JE Selling Leads, Price trend, HN2D01JE DataSheet download, circuit diagram from SeekIC.com

Features: · The HN2D01JE is composed of 2 independent diodes.· Low forward voltage : VF (3) = 0.98V (typ.)· Fast reverse recovery time: trr = 1.6ns (typ.)· Small total capacitance: CT = 0.5pF (typ.)Specifications Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage...

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SeekIC No. : 004365007 Detail

HN2D01JE: Features: · The HN2D01JE is composed of 2 independent diodes.· Low forward voltage : VF (3) = 0.98V (typ.)· Fast reverse recovery time: trr = 1.6ns (typ.)· Small total capacitance: CT = 0.5pF (typ.)...

HN2D01JE Data Sheet

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Part Number:: HN2D01JE
Supply Ability:: 5000

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Upload time: 2024/4/18

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Product Details

Description

Features:

· The HN2D01JE is composed of 2 independent diodes.
· Low forward voltage           : V_F (3) = 0.98V (typ.)
· Fast reverse recovery time  : t_rr = 1.6ns (typ.)
· Small total capacitance        : C_T = 0.5pF (typ.)

Specifications

Characteristic	Symbol	Rating	Unit
Maximum (peak) reverse Voltage	V_RM	85	V
Reverse voltage	V_R	80	V
Maximum (peak) forward current	I_FM	200 ^*	mA
Average forward current	I_O	100 ^*	mA
Surge current (10ms)	I_FSM	1^*	A
Power dissipation	P	100 ^**	mW
Junction temperature	T_j	150
Storage temperature	T_stg	-55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

*: Unit rating; total rating = unit rating * 1.5.
**: Total rating.

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HN2D01JE

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