HN2D01FU

DescriptionThe HN2D01FU is a kind of diode. It is silicon epitaxial planar type. It is intended for ultra high speed switching application. There are some features as follows: (1)the device is composed of 3 independent diodes; (2)low forward voltage: VF=0.98 V (typ); (3)fast reverse recovery time:...

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SeekIC No. : 004365006 Detail

HN2D01FU: DescriptionThe HN2D01FU is a kind of diode. It is silicon epitaxial planar type. It is intended for ultra high speed switching application. There are some features as follows: (1)the device is compo...

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Part Number:
HN2D01FU
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2021/1/24

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Product Details

Description



Description

The HN2D01FU is a kind of diode. It is silicon epitaxial planar type. It is intended for ultra high speed switching application. There are some features as follows: (1)the device is composed of 3 independent diodes; (2)low forward voltage: VF=0.98 V (typ); (3)fast reverse recovery time: trr=1.6 ns (typ); (4)small total capacitance: CT=0.5 pF (typ).

What comes next is about the maximum ratings of HN2D01FU (Ta=25): (1)maximum (peak) reverse voltage, VRM: 85 V; (2)reverse voltage, VR: 80 V; (3)maximum (peak) forward current, IFM: 240 mA; (4)average forward current, IO: 80 mA; (5)surge current (10 ms), IFSM: 1 A; (6)power dissipation, P: 200 mW; (7)junction temperature, Tj: 125; (8)storage temperature, Tstg: -55 to 125.

The following is about the electrical characteristics (Q1, Q2, Q3 common, Ta=25)of HN2D01FU: (1)forward voltage, VF(1): 0.62 V typ at IF=1 mA; (2)forward voltage, VF(2): 0.75 V typ at IF=10 mA; (3)forward voltage, VF(3): 0.98 V typ and 1.20 V max at IF=100 mA; (4)reverse current, IR: 0.1A max at VR=30 V and 0.5A at VR=80 V; (5)total capacitance, CT: 0.5 pF typ and 3.0 pF max at VR=0, f=1 MHz; (6)reverse recovery time, trr: 1.6 ns typ and 4.0 ns max at IF=10 mA.




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