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HN62W4018M

Features: • Low voltage operation: 3.3 V ± 0.3 V• High speed Normal access time: 120 ns/150 ns (max) Page access time: 40 ns/50 ns (max)• Low power consumption Active : 360 W (max) Standby : 0.72 mW (max) Power down mode : 36 mW (max)• 8-word page access mode• Three-s...

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SeekIC No. : 004365112 Detail

HN62W4018M: Features: • Low voltage operation: 3.3 V ± 0.3 V• High speed Normal access time: 120 ns/150 ns (max) Page access time: 40 ns/50 ns (max)• Low power consumption Active : 360 W (max)...

HN62W4018M Data Sheet

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Part Number:
HN62W4018M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/17

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Product Details

Description



Features:

• Low voltage operation: 3.3 V ± 0.3 V
• High speed
   Normal access time: 120 ns/150 ns (max)
   Page access time: 40 ns/50 ns (max)
• Low power consumption
   Active : 360 W (max)
   Standby : 0.72 mW (max)
   Power down mode : 36 mW (max)
• 8-word page access mode
• Three-state data output for or-tying
• LVTTL compatible


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Value
Unit
Note
Supply voltage
VDD
0.3 to +5.5
V
1
All input and output voltage
Vin, Vout
0.3 to VDD + 0.3
V
1
Operating temperatue range
Topr
0 to +70
°C
  
Storage temperature range
Tstg
55 to +125
°C
  
Temperature under bias
Tbias
20 to + 85
°C
  
Notes:
1. With respect to VSS



Description

The HN62W4018M is a 16-Mbit CMOS mask-programmable ROM organized as 1,048,576-word by 16- bit. Realizing low power consumption, this memory is allowed for battery operation. And a high speed access of 120/150 ns (max) is the most suitable to the system using a high speed micro-computer by 16- bit.




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