HSD32M64D8H

Features: • Part IdentificationHSD32M64D8H-10 :100MHz ( CL=2)HSD32M64D8H -10L :100MHz ( CL=3)HSD32M64D8H -80 :125MHz ( CL=3)HSD32M64D8H -75 :133Mhz (CL=3)• Burst mode operation• Auto & self refresh capability (8K Cycles/64ms)• LVTTL compatible inputs and outputs• ...

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SeekIC No. : 004366016 Detail

HSD32M64D8H: Features: • Part IdentificationHSD32M64D8H-10 :100MHz ( CL=2)HSD32M64D8H -10L :100MHz ( CL=3)HSD32M64D8H -80 :125MHz ( CL=3)HSD32M64D8H -75 :133Mhz (CL=3)• Burst mode operation• Au...

floor Price/Ceiling Price

Part Number:
HSD32M64D8H
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

• Part Identification
HSD32M64D8H-10 :100MHz ( CL=2)
HSD32M64D8H -10L :100MHz ( CL=3)
HSD32M64D8H -80 :125MHz ( CL=3)
HSD32M64D8H -75 :133Mhz (CL=3)
• Burst mode operation
• Auto & self refresh capability (8K Cycles/64ms)
• LVTTL compatible inputs and outputs
• Single 3.3V ±0.3V power supply
• MRS cycle with address key programs
- Latency (Access from column address)
- Burst length (1, 2, 4, 8 & Full page)
- Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• The used device is 8M x 8bit x 4Banks SDRAM



Specifications

PARAMETER SYMBOL RATING
Voltage on Any Pin Relative to Vss VIN ,OUT -1V to 4.6V
Voltage on Vcc Supply Relative to Vss Vcc -1V to 4.6V
Power Dissipation PD 8W
Storage Temperature TSTG -55oC to 150oC
Short Circuit Output Current IOS 50mA

Notes:
Permanent device damage may occur if " Absolute Maximum Ratings" are exceeded. Functional operation should be
restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.




Description

The HSD32M64D8H is a 32M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of eight CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 168-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The HSD32M64D8H is a DIMM(Dual in line Memory Module) and is intended for mounting into 168-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications All module components may be powered from asingle 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.




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