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HSD4M64B4

Features: ·Part IdentificationHSD4M64B4-F/10 :100MHz ( CL=2)HSD4M64B4-F/10L :100MHz ( CL=3)HSD4M64B4-F/12 :125MHz ( CL=3)HSD4M64B4-F/13 :133Mhz (CL=3)* F : Auto Self-Refresh with Low Power·Burst mode operation·Auto & self refresh capability (4096 Cycles/64ms)·LVTTL compatible inputs and output...

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SeekIC No. : 004366032 Detail

HSD4M64B4: Features: ·Part IdentificationHSD4M64B4-F/10 :100MHz ( CL=2)HSD4M64B4-F/10L :100MHz ( CL=3)HSD4M64B4-F/12 :125MHz ( CL=3)HSD4M64B4-F/13 :133Mhz (CL=3)* F : Auto Self-Refresh with Low Power·Burst mod...

HSD4M64B4 Data Sheet

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Part Number:
HSD4M64B4
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Part Identification
HSD4M64B4-F/10 :100MHz ( CL=2)
HSD4M64B4-F/10L :100MHz ( CL=3)
HSD4M64B4-F/12 :125MHz ( CL=3)
HSD4M64B4-F/13 :133Mhz (CL=3)
* F : Auto Self-Refresh with Low Power
·Burst mode operation
·Auto & self refresh capability (4096 Cycles/64ms)
·LVTTL compatible inputs and outputs
·Single 3.3V ±0.3V power supply
·MRS cycle with address key programs
- Latency (Access from column address)
- Burst length (1, 2, 4, 8 & Full page)
- Data scramble (Sequential & Interleave)
·JEDEC standard
·All inputs are sampled at the positive going edge of the system clock
·The used device is 1Mx16Bitx4Banks SDRAM




Specifications

PARAMETER
SYMBOL
RATING
Voltage on Any Pin Relative to Vss
VIN ,OUT
-1V to 4.6V
Voltage on Vcc Supply Relative to Vss
Vcc
-1V to 4.6V
Power Dissipation
PD
4W
Storage Temperature
TSTG
-55 to 150
Short Circuit Output Current
IOS
200mA
Notes:
Permanent device damage may occur if " Absolute Maximum Ratings" are exceeded. Functional operation should be
restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.




Description

The HSD4M64B4 is a 4M x 64 bit Synchronous Dynamic RAM high density memory module.

The HSD4M64B4 consists of four CMOS 1M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM.

The HSD4M64B4 is a SO-DIMM(Small Outline Dual in line Memory Module) and is intended for mounting into 144-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications All module components may be powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.






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