MOSFET TO-263
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 22 A | ||
| Resistance Drain-Source RDS (on) : | 0.125 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | TO-263AB | Packaging : | Reel |
| Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . VDSS | 200 | V |
| Drain to Gate Voltage (RGS = 20kΩ) (Note 1) .. . . . . . . . . . . . VDGR | 200 | V |
| Gate to Source Voltage . . . . . . . . . . . . . . . . . . . VGS | ±20 | V |
| Drain Current | ||
| Continuous (TC = 25, VGS = 10V) (Figure 2) . . . . .. . . . . ID | 22 | A |
| Continuous (TC = 100, VGS = 10V) (Figure 2) . . . . . . . . . . . . ID | 16 | A |
| Pulsed Drain Current . . . . . . . . . . . . . . . . . IDM | Figure 4 | |
| Pulsed Avalanche Rating . . . . . . . . . . . . . . . UIS | Figures 6, 14, 15 | |
| Power Dissipation . . . . . . .. . . . . . PD |
180 | W |
| Derate Above . . . . . . . . . . . . .25 | 1.2 | W/ |
| Operating and Storage Temperature . . . . . TJ, TSTG | -55 to 175 | |
| Maximum Temperature for Soldering | ||
| Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . TL | 300 | |
| Package Body for 10s, See Techbrief TB334. . . . . . . . Tpkg | 260 |