HUF76113T3ST

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 31 mOhms
Package / Case : SOT-223-4
Continuous Drain Current : 4.7 A


Features:

• Logic Level Gate Drive
• 4.7A, 30V
• Ultra Low On-Resistance, rDS(ON) = 0.031Ω
• Temperature Compensating PSPICE® Model
• Temperature Compensating SABER™ Model
• Thermal Impedance SPICE Model
• Thermal Impedance SABER Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
           - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

Drain to Source Voltage (Note 1). . . . . . . . . . . . . VDSS	30	V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . .VDGR	30	V
Gate to Source Voltage . . . . . . . . . . . . VGS	±16	V
Drain Current
Continuous (TA= 25, VGS = 10V) (Figure 2)(Note 2). . . . ID	4.7	A
Continuous (TA= 100, VGS = 5V) (Note 3) . . . . . . . . . . ID	2.7	A
Continuous (TA= 100, VGS = 4.5V)(Note 3) . . .. . . . . . ID	2.6	A
Pulsed Drain Current . . . . . . .. . . . . IDM	Figure 4
Pulsed Avalanche Rating. . . . . . . . . . EAS	Figures 6
Power Dissipation(Note 2) . . . . . . . . .. . . . PD	1.1	W
Derate Above 25 . . . . . . . . . . . . . . . . . .	0.0091	W/
Operating and Storage Temperature . . . . . . . . . . . TJ, TSTG	-55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . TL	300
Package Body for 10s, See Techbrief 334. . . . . . . .Tpkg	260

Description

This N-Channel power MOSFET HUF76113T3ST is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. HUF76113T3ST was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and batteryoperated products.

Formerly developmental type TA76113.