HVV1214-075 Selling Leads, Price trend, HVV1214-075 DataSheet download, circuit diagram from SeekIC.com

Features: · High Power Gain· Excellent Ruggedness· 48V Supply VoltageSpecifications Symbol Parameter Value Unit VDSS Drain-source voltage 95 V VGS Gate-source voltage 10 V IDSX Drain current 8 A PD2 Power Dissipation 250 W Ts S...

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SeekIC No. : 004367945 Detail

HVV1214-075: Features: · High Power Gain· Excellent Ruggedness· 48V Supply VoltageSpecifications Symbol Parameter Value Unit VDSS Drain-source voltage 95 V VGS Gate-source volt...

HVV1214-075 Data Sheet

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Part Number:: HVV1214-075
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/4/26

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HVV1214-025 evaluate
Features: • High Power Gain• Excellent Ruggedness• 48V Supply Voltage• Hig...
HVV1012-250 evaluate
Features: • Silicon MOSFET Technology• Operation from 24V to 50V• High Power Gai...
HVV1012-100 evaluate
Features: • High Power Gain• Excellent Ruggedness• 48V Supply VoltageDescription...

Product Details

Description

Features:

· High Power Gain
· Excellent Ruggedness
· 48V Supply Voltage

Specifications

Symbol	Parameter	Value	Unit
V_DSS	Drain-source voltage	95	V
V_GS	Gate-source voltage	10	V
I_DSX	Drain current	8	A
P_D²	Power Dissipation	250	W
T_s	Storage temperature	-65 to +200
T_J	Junction Temperature	200

Description

The high power HVV1214-075 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications operating over the frequency range from 1.2GHz to 1.4GHz.

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HVV1214-075

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