HWL27YRA Selling Leads, Price trend, HWL27YRA DataSheet download, circuit diagram from SeekIC.com

Features: • Low Cost GaAs Power FET• Class A or Class AB Operation• Greater than 17 dB Gain• 5V to 10V OperationSpecifications VDS Drain to Source Voltage +15V VGS Gate to Source Voltage -5V ID Drain Current IDSS IG Gate Current 2mA TCH Channel Tem...

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SeekIC No. : 004367996 Detail

HWL27YRA: Features: • Low Cost GaAs Power FET• Class A or Class AB Operation• Greater than 17 dB Gain• 5V to 10V OperationSpecifications VDS Drain to Source Voltage +15V VGS ...

HWL27YRA Data Sheet

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Part Number:: HWL27YRA
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Month Sales

268 Transactions

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Upload time: 2024/4/26

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Product Details

Description

Features:

• Low Cost GaAs Power FET
• Class A or Class AB Operation
• Greater than 17 dB Gain
• 5V to 10V Operation

Specifications

V_DS	Drain to Source Voltage	+15V
V_GS	Gate to Source Voltage	-5V
I_D	Drain Current	I_DSS
I_G	Gate Current	2mA
T_CH	Channel Temperature	175°C
T_STG	Storage Temperature	-65 to +175°C
P_T	Power Dissipation	3.5W

* mounted on an infinite heat sink

Description

The HWL27YRA is a Medium Power GaAs FET designed for various L-band & S-band applications. It is presently offered in low cost ceramic package.

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HWL27YRA

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