Features: • Low Cost GaAs Power FET• Class A or Class AB Operation• Greater than 17 dB Gain• 5V to 10V OperationSpecifications VDS Drain to Source Voltage +15V VGS Gate to Source Voltage -5V ID Drain Current IDSS IG Gate Current 2mA TCH Channel Tem...
HWL27YRA: Features: • Low Cost GaAs Power FET• Class A or Class AB Operation• Greater than 17 dB Gain• 5V to 10V OperationSpecifications VDS Drain to Source Voltage +15V VGS ...
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| VDS | Drain to Source Voltage | +15V |
| VGS | Gate to Source Voltage | -5V |
| ID | Drain Current | IDSS |
| IG | Gate Current | 2mA |
| TCH | Channel Temperature | 175°C |
| TSTG | Storage Temperature | -65 to +175°C |
| PT | Power Dissipation | 3.5W |