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Part Number: HY51VS18163HG

 

 

 

 

Description: The HY51V(S)18163HG/HGL is the new generation dynamic RAM organized 1,048,576 words x 16bit. HY51V(S)1...


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HY51VS18163HG General Description


The HY51V(S)18163HG/HGL is the new generation dynamic RAM organized 1,048,576 words x 16bit. HY51V(S)18163HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)18163HG/HGL offers Extended Data Out Page- Mode as a high speed access mode. Multiplexed address inputs permit the HY51V(S)18163HG/HGL to be packaged in standard 400mil 42pin SOJ and 44(50) pin TSOP-II. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment.

HY51VS18163HG Maximum Ratings

Parameter
Symbol
Rating
Unit
Ambient Temperature
TA
0 ~ 70
Storage Temperature
TSG
-55 ~ 125
Voltage on Any Pin relative to VSS
VT
-0.5 ~ Vcc + 0.5
(Max 4.6V)
V
Voltage on VDD relative to VSS
VCC
-0.5 ~ 4.6
V
Short Circuit Output Current
IOUT
50
mA
Power Dissipation
PT
1
W
Note : Operation at or above absolute Maximum Ratings can adversely affect device reliability

HY51VS18163HG Features

• Extended Data Out Mode capability
• Read-modify-write capability
• Multi-bit parallel test capability
• TTL(3.3V) compatible inputs and outputs
• /RAS only, CAS-before-/RAS, Hidden and self refresh(L-version) capability
• JEDEC standard pinout
• 42pin plastic SOJ / 44(50)pin TSOP-II (400mil)
• Single power supply of 3.3V +/- 0.3V
• Battery back up operation(L-version)
• 2CAS byte control

HY51VS18163HG Connection Diagram

HY51VS18163HG  Connection Diagram

HY51VS18163HG datasheet

HY51VS18163HG
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