HY5DU281622FTP-4

The HY5DU281622FTP-4 is designed as one kind of 134,217,728-bit CMOS Double Data Rate(DDR) Synchronous DRAM device that is suited for the main memory applications which requires large memory density and high bandwidth. The data paths are internally pipelined and 2-bit prefetched to achieve very high bandwidth. All input and output voltage levels are compatible with SSTL_2.

Features of the HY5DU281622FTP-4 are:(1)VDD, VDDQ = 2.6V +/- 0.1V;(2)All inputs and outputs are compatible with SSTL_2 interface;(3)Fully differential clock inputs (CK, /CK) operation;(4)Double data rate interface;(5)Source synchronous - data transaction aligned to bidirectional data strobe (DQS);(6)x16 device has two bytewide data strobes (UDQS, LDQS) per each x8 I/O;(7)On chip DLL align DQ and DQS transition with CK transition;(8)DM mask write data-in at the both rising and falling edges of the data strobe;(9)Full and Half strength driver option controlled by EMRS;(10)JEDEC standard 400mil 66pin TSOP-II with 0.65mm pin pitch.etc.

The absolute maximum ratings of the HY5DU281622FTP-4 can be summarized as:(1)Ambient Temperature: 0 to 70 ;(2)Storage Temperature: -55 to 125 ;(3)Voltage on Any Pin relative to VSS: -0.5 to 3.6 V;(4)Voltage on VDD relative to VSS: -0.5 to 3.6 V;(5)Voltage on VDDQ relative to VSS: -0.5 to 3.6 V;(6)Output Short Circuit Current: 50 mA;(7)Power Dissipation: 1 W;(8)Soldering Temperature Þ Time: 260 /sec. If you want to know more information such as the electrical characteristics about the HY5DU281622FTP-4, please download the datasheet in www.seekic.com or www.chinaicmart.com.