HY628100BLLT1-70

The HY628100BLLT1-70 is one member of the HY628100B family which designed as the high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8 bit. With the help of high performance CMOS process technology and high speed low power circuit technology, it can be used in high density low power system application.

Features of the HY628100BLLT1-70 are:(1)fully static operation and tri-state output;(2)TTL compatible inputs and outputs;(3)battery backup(L/LL-part) 2.0V(min) data retention;(4)standard pin configuration:32pin SOP-525mil and 32pin TSOPI-8X20(standard).

The absolute maximum ratings of the HY628100BLLT1-70 can be summarized as:(1)power supply, input/output voltage:-0.5 to 7.0 V;(2)operating temperat-ure:0 to 70 °C;(3)storage temperature:-65 to 125 °C;(4)power dissipation:1.0 W;(5)data output current:50 mA;(6)lead soldering temperature & time: 260·10 °C·sec. If you want to know more information such as the electrical characteristics about the HY628100BLLT1-70, please download the datasheet in www.seekic.com or www.chinaicmart.com .