MFG:HYUNDAI Package Cooled:TSOP
MFG: HYUNDAI
Package Cooled: TSOP
Description: The HY628400A is a high-speed, low power and 4M bits CMOS SRAM organized as 512K words by 8 bits. The ...
The HY628400A is a high-speed, low power and 4M bits CMOS SRAM organized as 512K words by 8 bits. The HY628400A uses Hynix's high performance twin tub CMOS process technology and was designed for high-speed and low power circuit technology. It is particularly well suited for use in high-density and low power system applications. This device has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.0V.
|
Symbol |
Parameter |
Rating |
Unit | |
|
Vcc, VIN, VOUT |
Power Supply, Input/Output Voltage |
-0.3 to 7.0 |
V | |
|
TA |
Operating Temperature | HY628400A |
0 to 70 |
°C |
| HY628400A-E |
-25 to 85 |
°C | ||
| HY628400A-I |
-40 to 85 |
°C | ||
|
TSTG |
Storage Temperature |
-65 to 150 |
°C | |
|
PD |
Power Dissipation |
1.0 |
W | |
|
IOUT |
Data Output Current |
50 |
mA | |
|
TSOLDER |
Lead Soldering Temperature & Time |
260 ·10 |
°C·sec | |
HY628400A
PDF/DataSheet Download
The HY628400 has the following features including High speed-55R01851100ns (max.);Fully static operation;No clock or refresh required;TTL compatible inputs and outputs;Tri-state output. The HY628400 is a high-speed, low power and 524,288x8-bits CMOS static ...
The HY628100BLLT1-70 is one member of the HY628100B family which designed as the high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8 bit. With the help of high performance CMOS process technology and high speed l...
The HY628100BLLG-55 is one member of the HY628100B family which designed as one kind of high speed, low power and 1M bit CMOS Static Random Access Memory that organized as 131,072 words by 8bit.It uses high performance CMOS process technology and designed fo...
The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary w...
The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary w...
The HY62256A/HY62256A-I is a high-speed, low power and 32,786 x 8-bits CMOS Static Random Access Memory fabricated using Hyundai's high performance CMOS process technology.It has a data retention mode that guarantees data to remain valid at the minimum power...
Price: 0.01-100 USD
ceramic capacitor, smoothing, SMD
Price: 14-16 USD
Integrated Power Circuit, MODULE, 40 A, Glass passivated junctions, High dynamic
Price: 2.3-2.8 USD
80C51 8-bit, Flash microcontroller, 32KB, Flash program memory, PLCC
Price: 10-35 USD
IGBT-IPM, R series, 1200V, 50A, 7 in one-package, MODULE, Low power loss, soft switching
Price: 6.1-7 USD
line receiver, dip, 7 V
Price: 1.5-2 USD
Single Chip, Fast Ethernet Controller, QFP, highly integrated, cost-effective, 3.3V
Price: 4.9-5.2 USD
TDA12011H-N1F00, Philips Electronics India Limited, Integrated Circuits (ICs), QFP128
Price: 0.7-1.2 USD
IC OPAMP GP R-R CMOS 1MHZ 8SOIC - AD8542ARZ
Price: 65-86 USD
hybrid power module, 1600V, 25A, UL Recognition Pending, Short Circuit Rated
Price: 0.4-0.7 USD
high voltage, high speed, power MOSFET and IGBT driver, -0.3V to 525V, 1.6 W, Undervoltage lockout...
Price: 12.68-18.52 USD
CDIP40, EPROM/ROM, highspeed micro, Large On chip Memory, 7.0V, 16KB
Price: 1.2-1.5 USD
IC WIRELESS USB LP 2.4GHZ 40VQFN - CYRF6936-40LTXC
