HY62SF16804A

Features:

· Fully static operation and Tri-state output
· TTL compatible inputs and outputs
· Battery backup(LL/SL-part)
    - 1.2V(min) data retention
· Standard pin configuration
    - 48-uBGA

Pinout




Specifications

Symbol	Parameter	Rating	Unit	Remark
VIN, VOUT	Input/Output Voltage	-0.2 to 3.6	V
Vcc	Power Supply	-0.2 to 4.6	V
TA	Operating Temperature	0 to 70		HY62SF16804A-C
		-40 to 85		HY62SF16804A-I
TSTG	Storage Temperature	-55 to 150
PD	Power Dissipation	1.0	W
TSOLDER	Ball Soldering Temperature &Time	260`10	`sec

Note:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and the functional operation of the     device under these or any other conditions above those indicated in the operation of this specification is not implied.
   Exposure to the absolute maximum rating conditions for extended period may affect reliability.


Description

The HY62SF16804A is a high speed, super low power and 8Mbit full CMOS SRAM organized as 524,288 words by 16bits. It uses high performance full CMOS process
technology and is designed for high speed and low power circuit technology. HY62SF16804A is particularly wellsuited for the high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V.