HYB514256B

Pinout

Specifications

Operating temperature range ........................................................0 to + 70 ˚C
Storage temperature range.................................................... 55 to + 150 ˚C
Soldering temperature ............................................................................260 ˚C
Soldering time.............................................................................................10 s
Input/output voltage .................................................................... 1 to + 7 V
Power supply voltage.................................................................... 1 to + 7 V
Power dissipation..................................................................................... 0.6 W
Data out current (short circuit) ................................................................ 50 mA


Description

The HYB HYB514256B is the new generation dynamic RAM organized as 262 144 words by 4-bit. The HYB HYB514256B utilizes CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and for the system user. Multiplexed address inputs permit the HYB HYB514256B to be packaged in a standard plastic P-DIP-20-2,or plastic P-SOJ-26/20-1. This package size provides high system bit densities and is compatible with commonly used automatic testing and insertion equipment. System oriented features include single + 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as Schottky TTL. These HYB514256B JL are specially selected for battery backup applications.