Purchase IC41LV16100S, In-stock IC41LV16100S From SeekIC.


Part Number: IC41LV16100S
Description: The ICSI IC41C16100S and IC41LV16100S are 1,048,576 x16-bit high-performance CMOS Dynamic ...


Description: The ICSI IC41C16100S and IC41LV16100S are 1,048,576 x16-bit high-performance CMOS Dynamic ...
The ICSI IC41C16100S and IC41LV16100S are 1,048,576 x16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 ran-dom accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IC41C16100S ideal for use in 16-, 32-bit wide data bus systems.
These features make the IC41C16100Sand IC41LV16100S ideally suited for high-bandwidth graphics, digital signal processing, high-performance computing systems, and peripheral applications.
The IC41C16100S and IC41LV16100S are packaged in a 42-pin 400mil SOJ and 400mil 50- (44-) pin TSOP-2.
| Symbol | Parameters |
Rating |
Unit | |
| VT | Voltage on Any Pin Relative to GND |
5V 3.3V |
-1.0 to +7.0 -0.5 to +4.6 |
V |
| VCC | Supply Voltage |
5V 3.3V |
-1.0 to +7.0 -0.5 to +4.6 |
V |
| IOUT PD |
Output Current Power Dissipation |
50 1 |
mA W | |
| TA | Commercial Operation Temperature Industrial Operationg Temperature |
0 to +70 -40 to +85 |
| |
| TSTG | Storage Temperature |
-55 to +125 |
Note:1.Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
IC41C16100A
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