MFG:Other Category:Other
Category: Other
MFG: Other
Description: The IC42S8200(ICSI's 16Mb Synchronous DRAM) is organized as a 1Meg x 8-bit x 2-bank for improved performance. The synchro...
The IC42S8200(ICSI's 16Mb Synchronous DRAM) is organized as a 1Meg x 8-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.
The features of IC42S8200 can be summarized as (1)clock frequency: 166, 143, 125, 100 MHz; (2)fully synchronous; all signals referenced to a positive clock edge; (3)two banks can be operated simultaneously and independently; (4)dual internal bank controlled by A11 (bank select); (5)single 3.3V power supply; (6)LVTTL interface; (7)programmable burst length-(2, 4, 8, full page); (8)programmable burst sequence: sequential/interleave; (9)auto refresh, self refresh; (10)4096 refresh cycles every 128 ms; (11)random column address every clock cycle; (12)programmable CAS latency (2, 3 clocks); (13)burst read/write and burst read/single write operations capability; (14)burst termination by burst stop and precharge command; (15)package 400mil 44-pin TSOP-2.
The absolute maximum ratings of IC42S8200 are (1)VCC MAX maximum supply voltage: -1.0 to +4.6V; (2)VCCQ MAX maximum supply voltage for output buffer: -1.0 to +4.6V; (3)VIN input voltage: -1.0 to +4.6V; (4)VOUT output voltage: -1.0 to +4.6V ; (5)PD MAX allowable power dissipation: 1W; (6)lCS output snorted current: 50 mA ; (7)TOPR operating temperature: 0 to +70°C; (8)TSTG storage temperature: -55 to +150°C.
IC42S8200
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