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Description: The ICSI IC61LV6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It...


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IC61LV6416 General Description


The ICSI IC61LV6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ICSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption.

When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.

Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access.

The IC61LV6416 is packaged in the JEDEC standard 44-pin 400mil SOJ, 44-pin 400mil TSOP-2, and 48-pin 6*8mm TFBGA.

IC61LV6416 Maximum Ratings

Symbol
Parameter
Value
Unit
VTERM
Terminal Voltage with Respect to GND
0.5 to Vcc+0.5
V
TSTG
Storage Temperature
65 to +150
°C
PT
Power Dissipation
1.5
W
IOUT
DC Output Current (LOW)
20
mA

IC61LV6416 Features

• High-speed access time: 8, 10, 12, and 15 ns
• CMOS low power operation
   - 250 mW (typical) operating
   - 250 W (typical) standby
• TTL compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available

IC61LV6416 Connection Diagram

IC61LV6416  Connection Diagram

IC61LV6416 datasheet

IC61LV6416
PDF/DataSheet Download

  • Datasheet: IC61LV6416
  • File Size: 97739 KB
  • Manufacturer: ICSI [Integrated Circuit Solution Inc]
  • Click here to Download

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