IPD35N10S3L-26, US $ .2-.26 , Infineon Technologies, IPD35N10S3L-26 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00156201 Detail

IPD35N10S3L-26: MOSFET N-Channel enh MOSFET 100V

IPD35N10S3L-26 Data Sheet

US $ .2~.26 / Piece | Get Latest Price

Part Number:: IPD35N10S3L-26
Mfg:: Infineon Technologies
Supply Ability:: 5000

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Upload time: 2024/4/26

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Recent History
What is this?

IPD30N03S2L-07 evaluate
US $.32 - .64 / Piece

MOSFET OPTIMOS PWR-TRANS N-CH 30V 30A 6.7mOhm
IPD30N03S2L-20 evaluate
US $.13 - .18 / Piece

MOSFET OPTIMOS PWR-TRANS N-CH 30V 30A 20mOhms
IPD30N03S4L-14 evaluate
US $.2 - .4 / Piece

MOSFET OPTIMOS T2 N-CH 30V 30A 13.6mOhms

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	100 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	35 A
Resistance Drain-Source RDS (on) :	24 mOhms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Package / Case :	TO-252
Packaging :	Reel

Description

Mounting Style :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Continuous Drain Current : 35 A
Package / Case : TO-252
Resistance Drain-Source RDS (on) : 24 mOhms

Parameters:

Technical/Catalog Information	IPD35N10S3L-26
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	35A
Rds On (Max) @ Id, Vgs	24 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds	2700pF @ 25V
Power - Max	71W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	39nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IPD35N10S3L 26 IPD35N10S3L26

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IPD35N10S3L-26

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