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IPD35N10S3L-26

MOSFET N-Channel enh MOSFET 100V

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SeekIC No. : 00156201 Detail

IPD35N10S3L-26: MOSFET N-Channel enh MOSFET 100V

IPD35N10S3L-26 Data Sheet

floor Price/Ceiling Price

US $ .2~.26 / Piece | Get Latest Price
Part Number:
IPD35N10S3L-26
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1550
  • 1550~2500
  • 2500~5000
  • 5000~10000
  • Unit Price
  • $.26
  • $.22
  • $.21
  • $.2
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 35 A
Resistance Drain-Source RDS (on) : 24 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Package / Case : TO-252
Packaging : Reel    

Description

Mounting Style :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Continuous Drain Current : 35 A
Package / Case : TO-252
Resistance Drain-Source RDS (on) : 24 mOhms


Parameters:

Technical/Catalog InformationIPD35N10S3L-26
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C35A
Rds On (Max) @ Id, Vgs24 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds 2700pF @ 25V
Power - Max71W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs39nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPD35N10S3L 26
IPD35N10S3L26



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